发明授权
- 专利标题： Method of manufacturing a multilayer metallization structure with non-directional sputtering method
- 专利标题（中）： 使用非定向溅射法制造多层金属化结构的方法
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申请号： US09822318申请日： 2001-04-02
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公开(公告)号： US06764945B2公开(公告)日： 2004-07-20
- 发明人: Hiroshi Ashihara , Tatsuyuki Saito , Uitsu Tanaka , Hidenori Suzuki , Hideaki Tsugane , Yasuko Yoshida , Ken Okutani
- 申请人： Hiroshi Ashihara , Tatsuyuki Saito , Uitsu Tanaka , Hidenori Suzuki , Hideaki Tsugane , Yasuko Yoshida , Ken Okutani
- 优先权： JP2001-014068 20010123
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.