发明授权
US06765280B1 Local oxidation of a sidewall sealed shallow trench for providing isolation between devices of a substrate
失效
侧壁密封的浅沟槽的局部氧化，用于在衬底的器件之间提供隔离
- 专利标题： Local oxidation of a sidewall sealed shallow trench for providing isolation between devices of a substrate
- 专利标题（中）： 侧壁密封的浅沟槽的局部氧化，用于在衬底的器件之间提供隔离
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申请号： US09217740申请日： 1998-12-21
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公开(公告)号： US06765280B1公开(公告)日： 2004-07-20
- 发明人: Min Cao , Paul J. Vande Voorde , Wayne M. Greene , Malahat Tavassoli
- 申请人： Min Cao , Paul J. Vande Voorde , Wayne M. Greene , Malahat Tavassoli
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
A semiconductor isolation structure. The semiconductor isolation structure includes a substrate. A first device and a second device are formed within the substrate. An isolation region is formed within the substrate between the first device and the second device. The isolation region includes a deep region which extends into the substrate. The deep region includes a deep region cross-sectional area. A shallow region extends to the surface of the substrate. The shallow region includes a shallow region cross-sectional area. The deep region cross-sectional area is greater than the shallow region cross-sectional area. For an alternate embodiment, the deep region includes an oxide and the shallow region includes a protective wall. The protective wall can be formed from an oxide and a nitride.
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