公开(公告)号：US06586283B2

公开(公告)日：2003-07-01

申请号：US09539490

申请日：2000-03-30

申请人： John J. Corcoran ,  Travis N. Blalock ,  Paul J. Vande Voorde ,  Thomas A. Knotts ,  Neela B. Gaddis

发明人： John J. Corcoran ,  Travis N. Blalock ,  Paul J. Vande Voorde ,  Thomas A. Knotts ,  Neela B. Gaddis

IPC分类号： H01L31332

CPC分类号： H01L27/10897

摘要： An apparatus and a method for protecting charge storage elements from photo-induced currents in silicon integrated circuits are provided. In order to protect against photo-induced currents that are generated outside the storage node circuits themselves, an n-well guard ring is placed as closely as possible to the transistors and other elements in the storage node circuits. As a result there is a minimum of exposed silicon area in which light can produce current in areas next to the storage node circuits, and the n-well guard ring captures photo-induced currents that are generated outside the storage node circuits. In order to protect against the photo-induced currents that are generated inside the storage node circuits, an aluminum interconnect layer is placed on top of the storage node circuit, separated by an insulating layer of silicon dioxide. This creates a shield against the light and protects the storage node circuit by reflecting light away.

摘要翻译： 提供了一种用于在硅集成电路中保护电荷存储元件免受光电流的装置和方法。 为了防止在存储节点电路本身之外产生的光感应电流，n阱保护环尽可能靠近晶体管和存储节点电路中的其他元件放置。 因此，在存储节点电路旁边的区域中存在光可以产生电流的暴露的硅区域的最小值，并且n阱保护环捕获在存储节点电路外部产生的光感应电流。 为了防止在存储节点电路内产生的光感应电流，铝互连层被放置在存储节点电路的顶部，由二氧化硅的绝缘层分开。 这产生了防护光，并通过反射光来保护存储节点电路。

公开(公告)号：US07038242B2

公开(公告)日：2006-05-02

申请号：US09795608

申请日：2001-02-28

申请人： Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook ,  Min Cao

发明人： Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook ,  Min Cao

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L31/0376 ,  H01L27/14681 ,  Y02E10/50

摘要： An array of light-sensitive sensors utilizes bipolar phototransistors that are formed of multiple amorphous semiconductor layers, such as silicon. In the preferred embodiment, the bipolar transistors are open base devices. In this preferred embodiment, the holes that are generated by reception of incoming photons to a particular open base phototransistor provide current injection to the base region of the phototransistor. The collector region is preferably an intrinsic amorphous silicon layer. The phototransistors may be operated in either an integrating mode in which bipolar current is integrated or a static mode in which a light-responsive voltage is monitored.

公开(公告)号：US06765280B1

公开(公告)日：2004-07-20

申请号：US09217740

申请日：1998-12-21

申请人： Min Cao ,  Paul J. Vande Voorde ,  Wayne M. Greene ,  Malahat Tavassoli

发明人： Min Cao ,  Paul J. Vande Voorde ,  Wayne M. Greene ,  Malahat Tavassoli

IPC分类号： H01L2900

CPC分类号： H01L21/76232

摘要： A semiconductor isolation structure. The semiconductor isolation structure includes a substrate. A first device and a second device are formed within the substrate. An isolation region is formed within the substrate between the first device and the second device. The isolation region includes a deep region which extends into the substrate. The deep region includes a deep region cross-sectional area. A shallow region extends to the surface of the substrate. The shallow region includes a shallow region cross-sectional area. The deep region cross-sectional area is greater than the shallow region cross-sectional area. For an alternate embodiment, the deep region includes an oxide and the shallow region includes a protective wall. The protective wall can be formed from an oxide and a nitride.

摘要翻译： 半导体隔离结构。 半导体隔离结构包括基板。 第一器件和第二器件形成在衬底内。 在第一装置和第二装置之间的衬底内形成隔离区。 隔离区域包括延伸到衬底中的深区域。 深区域包括深区域横截面积。 浅区域延伸到基板的表面。 浅区域包括浅区域横截面积。 深区域横截面积大于浅区域横截面积。 对于替代实施例，深区域包括氧化物，浅区域包括保护壁。 保护壁可以由氧化物和氮化物形成。

公开(公告)号：US06111300A

公开(公告)日：2000-08-29

申请号：US203445

申请日：1998-12-01

申请人： Min Cao ,  Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook

发明人： Min Cao ,  Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook

IPC分类号： H01L31/10 ,  H01L27/146 ,  H01L31/00 ,  H01L31/075 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L27/14609 ,  H01L27/14647

摘要： A color detection active pixel sensor. The color detection active pixel sensor includes a substrate. A diode is electrically connected to a first doped region of the substrate. The diode conducts charge when the diode receives photons having a first range of wavelengths. The substrate includes a second doped region. The second doped region conducts charge when receiving photons having a second range of wavelengths. The photons having the second range of wavelengths passing through the diode substantially undetected by the diode. The substrate can include a doped well within the substrate. The doped well conducts charge when receiving photons having a third range of wavelengths. The photons having the third range of wavelengths pass through the diode substantially undetected by the diode.

摘要翻译： 颜色检测有源像素传感器。 颜色检测有源像素传感器包括基板。 二极管电连接到衬底的第一掺杂区域。 当二极管接收具有第一波长范围的光子时，二极管导通电荷。 衬底包括第二掺杂区域。 当接收具有第二波长范围的光子时，第二掺杂区域传导电荷。 具有基本上不被二极管检测到的通过二极管的第二波长范围的光子。 衬底可以包括衬底内的掺杂阱。 当接收具有第三波长范围的光子时，掺杂阱导电。 具有第三波长范围的光子通过基本上不被二极管检测的二极管。