发明授权
- 专利标题: Method of manufacturing thin-film transistor
- 专利标题(中): 制造薄膜晶体管的方法
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申请号: US09701648申请日: 2000-11-30
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公开(公告)号: US06767775B1公开(公告)日: 2004-07-27
- 发明人: Ichio Yudasaka , Tatsuya Shimoda , Shunichi Seki
- 申请人: Ichio Yudasaka , Tatsuya Shimoda , Shunichi Seki
- 优先权: JP11-127502 19990330
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
All or a part of the thin films such as the silicon film, insulation film and conductive film are formed using liquid materials. The main method includes the steps of forming a coating film by coating the liquid material on the substrate, and heat-treating the coating film for converting it into a desired thin film, thereby enabling the thin film transistor to be manufactured using a cheap manufacturing equipment.
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