Invention Grant
US06768113B2 WORKPIECE HOLDER, SEMICONDUCTOR FABRICATING APPARATUS, SEMICONDUCTOR INSPECTING APPARATUS, CIRCUIT PATTERN INSPECTING APPARATUS, CHARGED PARTICLE BEAM APPLICATION APPARATUS, CALIBRATING SUBSTRATE, WORKPIECE HOLDING METHOD, CIRCUIT PATTERN INSPECTING METHOD, AND CHARGED PARTICLE BEAM APPLICATION METHOD
失效
工件夹具，半导体制造装置，半导体检查装置，电路图案检查装置，充电颗粒光束应用装置，校准基板，工件保持方法，电路图案检查方法和充电颗粒光束应用方法
- Patent Title: WORKPIECE HOLDER, SEMICONDUCTOR FABRICATING APPARATUS, SEMICONDUCTOR INSPECTING APPARATUS, CIRCUIT PATTERN INSPECTING APPARATUS, CHARGED PARTICLE BEAM APPLICATION APPARATUS, CALIBRATING SUBSTRATE, WORKPIECE HOLDING METHOD, CIRCUIT PATTERN INSPECTING METHOD, AND CHARGED PARTICLE BEAM APPLICATION METHOD
- Patent Title (中): 工件夹具，半导体制造装置，半导体检查装置，电路图案检查装置，充电颗粒光束应用装置，校准基板，工件保持方法，电路图案检查方法和充电颗粒光束应用方法
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Application No.: US10309275Application Date: 2002-12-26
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Publication No.: US06768113B2Publication Date: 2004-07-27
- Inventor: Hiroyuki Suzuki , Hiroyuki Shinada , Atsuko Takafuji , Yasutsugu Usami , Shuji Sugiyama
- Applicant: Hiroyuki Suzuki , Hiroyuki Shinada , Atsuko Takafuji , Yasutsugu Usami , Shuji Sugiyama
- Priority: JP10-108972 19980420; JP10-135404 19980518
- Main IPC: H01J3726
- IPC: H01J3726
Abstract:
Heights of a sample are calibrated by setting a calibrating substrate on a stage and then irradiating a charged particle beam onto standard marks provided on at least two kinds of surfaces having different substrate heights. Secondary charged particles produced from said irradiated standard marks on the substrate are and detected and a surface height of the irradiated portion of the substrate measured. The difference in height between the standard marks is set to be in a range containing an extent, over the entire sample, to which the height of the sample varies due to warping.
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