Abstract:
An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer. The present invention exists in an ultimate analyzer comprising a scattered electron beam detector for detecting an electron beam scattered by an object to be analyzed; an electron spectrometer for energy dispersing an electron beam transmitted through the object to be analyzed; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements of the object to be analyzed based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector. Further, the present invention exists in a scanning transmission electron microscope comprising the above ultimate analyzer; an electron beam source; an electron beam scanning coil; a scattered electron beam detector; objective lenses; a focusing lens; a magnifying magnetic field lens; and a focus adjusting electromagnetic lens. Furthermore, the ultimate analyzer or the scanning transmission electron microscope may comprises a control unit which makes it possible that both of an image of element distribution and an STEM image detected and formed by the scatted electron beam detector are observed at a time in real time, and the image of element distribution is corrected by the STEM image detected and formed by the scattered electron beam detector.
Abstract:
A system and method for directing the object, such as a semiconductor die. The system includes a first images such as a scanning electron microscope, a stage for moving the object and a second imager and miller such as a focused ion beam generator. The object is images to locate a desired location in which the object is to be milled and a landmark that is utilized for directing the miller. The system can include additional steps of milling, analyzing and movement of the object.
Abstract:
It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.
Abstract:
A method of correcting a scanning electron microscope using a detection sample for producing light of an intensity corresponding to an electron density of an electron beam irradiating a surface of the detection sample. Precise correction of the scanning electron microscope is performed on the basis of the intensity of the light generated on the detection sample.
Abstract:
It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.
Abstract:
Amplification of the current of secondary electrons emanating from the specimen 14 is realized in an ESEM by avalanche-like ionization of the molecules 41 of the gas atmosphere. However, in order to achieve an adequate number of successive ionizations, a comparatively high value of the electric field at the detector electrode 46 is required and, because of the risk of electric breakdowns, the distance between the specimen and the detector electrode may not be smaller than a comparatively large minimum distance. The number of successive ionizations, and hence the current amplification, is thus limited. The invention proposes to configure the electric field of the detector 46, 50, co-operating with the magnetic field 52 of the immersion lens 8 already present in the ionization space, as an electric multipole field. In the case of electric multipoles, at a given field strength on the optical axis the electric field strength outside the optical axis may be substantially higher. Thus, while influencing the primary electron beam slightly only, a strong detector field can be provided so that the secondary electrons to be accelerated receive adequate energy to realize numerous multipole ionizations, and hence a high current amplification in the gas atmosphere around the specimen.
Abstract:
A reflection prevention board of a charged particle beam irradiation apparatus of the present invention comprises a laminate sheet having a plurality of thin films and a plurality of microholes through the laminate sheet. According to the present invention the reflection prevention board can be manufactured at a lower cost, the reason being that it is easier to form microholes in the thin films and then laminate these thin films in an aligned relation than to drill holes through a thicker sheet. By doing so it is possible to achieve a better yield. Further, much deeper microholes, which might not otherwise be achieved on a thick sheet, can be formed by using more thin films and a reflection prevention effect can be improved by doing so.
Abstract:
Automatically corrected is a movement of a field of view caused upon changing a magnification. A field of view is searched for with a first magnification. A sample stage coordinate of a designated subject of recording is computed, for storage, on a transmission electron beam image of a sample displayed on an image display section. A subject-of-recording image is cut out of the transmission electron beam image of the sample in the first magnification and stored as a first image. The magnification of the transmission electron microscope is set to a magnification twice a magnification in the recording mode, to move the sample stage to the stored sample stage coordinate of the subject of recording. The transmission electron beam image in the second magnification is captured with the same number of pixels as the first image to compute a movement amount of between the two images from a correlation intensity of the first and second images. Then, the transmission electron beam image in the second magnification is corrected in position with respect to imaging means such that the movement amount is zero, to store an obtained transmission electron beam image (S29).
Abstract:
On a sample base 1 disposed within a vacuum container is provided a scale S(1). . . S(N), where in an actual distance of the sample base is monitored by observing the scale trough an optical system for exclusive use thereof, which can catch it within a field of view. With this, it is possible to position a foreign body, as a target of analysis, which is analyzed or observed by a first analysis/observation device, so that it necessarily falls within a field of view of a second analysis/observation device, thereby realizing quick and automatic delivery of the samples when observing the foreign body on the sample by plural numbers of the devices.
Abstract:
A method for a mass spectrometric determination of contaminant components of a thin oxide surface layer of a semiconductor wafer use a movable mechanical stage to scan and raster a large area of the wafer in a continuous scanning motion. The mass of analyte is greatly increased, resulting in improved sensitivity to trace components in the surface layer by a factor of 10-100 or more. A light beam interferometer is used to determine non-planarity from e.g., warping of the wafer and provide a correction by maintaining a constant separation between the wafer and the extraction plate or adjusting the electrical bias of the wafer relative to the extraction bias.