Ultimate analyzer, scanning transmission electron microscope and ultimate analysis method
    1.
    发明授权
    Ultimate analyzer, scanning transmission electron microscope and ultimate analysis method 有权
    终极分析仪,扫描透射电子显微镜和最终分析方法

    公开(公告)号:US06794648B2

    公开(公告)日:2004-09-21

    申请号:US10196577

    申请日:2002-07-17

    Abstract: An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer. The present invention exists in an ultimate analyzer comprising a scattered electron beam detector for detecting an electron beam scattered by an object to be analyzed; an electron spectrometer for energy dispersing an electron beam transmitted through the object to be analyzed; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements of the object to be analyzed based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector. Further, the present invention exists in a scanning transmission electron microscope comprising the above ultimate analyzer; an electron beam source; an electron beam scanning coil; a scattered electron beam detector; objective lenses; a focusing lens; a magnifying magnetic field lens; and a focus adjusting electromagnetic lens. Furthermore, the ultimate analyzer or the scanning transmission electron microscope may comprises a control unit which makes it possible that both of an image of element distribution and an STEM image detected and formed by the scatted electron beam detector are observed at a time in real time, and the image of element distribution is corrected by the STEM image detected and formed by the scattered electron beam detector.

    Abstract translation: 本发明的目的是提供一种能够以高对比度显示待分析物体的元素分布图像,以高精度地确定元件分布的位置的最终分析器,以及扫描透射电子显微镜和 使用最终分析仪分析元素。 本发明存在于包含用于检测由待分析物体散射的电子束的散射电子束检测器的终极分析仪中; 用于能量分散通过待分析物体的电子束的电子光谱仪; 用于检测所述分散的电子束的电子束检测器; 以及控制单元,用于基于由电子束检测器检测的电子束的输出信号和由散射电子束检测器检测的电子束的输出信号来分析待分析物体的元件。 此外,本发明存在于包含上述极限分析仪的扫描透射电子显微镜中; 电子束源; 电子束扫描线圈; 散射电子束检测器; 物镜; 聚焦镜头; 放大磁场透镜; 和聚焦调整电磁透镜。 此外,最终分析器或扫描透射电子显微镜可以包括控制单元,其使得可以实时地观察由散射电子束检测器检测和形成的元件分布的图像和STEM图像两者, 并且通过由散射电子束检测器检测和形成的STEM图像校正元件分布的图像。

    Correction method of scanning electron microscope
    4.
    发明授权
    Correction method of scanning electron microscope 失效
    扫描电子显微镜的校正方法

    公开(公告)号:US06576902B2

    公开(公告)日:2003-06-10

    申请号:US09734556

    申请日:2000-12-13

    CPC classification number: H01J37/28 G01N23/04 G01N23/22 H01J37/265

    Abstract: A method of correcting a scanning electron microscope using a detection sample for producing light of an intensity corresponding to an electron density of an electron beam irradiating a surface of the detection sample. Precise correction of the scanning electron microscope is performed on the basis of the intensity of the light generated on the detection sample.

    Abstract translation: 使用用于产生与照射检测样品的表面的电子束的电子密度相对应的强度的光的检测样品来校正扫描电子显微镜的方法。 基于在检测样品上产生的光的强度进行扫描电子显微镜的精确校正。

    Environmental SEM with a multiple fields for improved secondary electron detection
    6.
    发明授权
    Environmental SEM with a multiple fields for improved secondary electron detection 有权
    具有改善二次电子检测的多极场的环境SEM

    公开(公告)号:US06184525B2

    公开(公告)日:2001-02-06

    申请号:US09205441

    申请日:1998-12-04

    CPC classification number: H01J37/244 H01J2237/2448 H01J2237/2608

    Abstract: Amplification of the current of secondary electrons emanating from the specimen 14 is realized in an ESEM by avalanche-like ionization of the molecules 41 of the gas atmosphere. However, in order to achieve an adequate number of successive ionizations, a comparatively high value of the electric field at the detector electrode 46 is required and, because of the risk of electric breakdowns, the distance between the specimen and the detector electrode may not be smaller than a comparatively large minimum distance. The number of successive ionizations, and hence the current amplification, is thus limited. The invention proposes to configure the electric field of the detector 46, 50, co-operating with the magnetic field 52 of the immersion lens 8 already present in the ionization space, as an electric multipole field. In the case of electric multipoles, at a given field strength on the optical axis the electric field strength outside the optical axis may be substantially higher. Thus, while influencing the primary electron beam slightly only, a strong detector field can be provided so that the secondary electrons to be accelerated receive adequate energy to realize numerous multipole ionizations, and hence a high current amplification in the gas atmosphere around the specimen.

    Abstract translation: 通过气体气氛的分子41的雪崩状电离,在ESEM中实现从样品14发出的二次电子的电流的放大。 然而,为了实现足够数量的连续电离,需要在检测器电极46处具有相当高的电场值,并且由于电击穿的风险,样本和检测器电极之间的距离可能不是 小于比较大的最小距离。 因此,连续电离的数量以及因此的电流放大被限制。 本发明提出了将已经存在于电离空间中的浸没透镜8的磁场52配合的检测器46,50的电场作为电多极场。 在电气多极的情况下,在光轴上的给定场强下,光轴外的电场强度可能显着更高。 因此,在稍微仅影响一次电子束的同时,可以提供强的检测器场,使得待加速的二次电子能够接收足够的能量以实现许多多极电离,从而在样品周围的气体气氛中进行高电流放大。

    Charged particle beam irradiation apparatus
    7.
    发明授权
    Charged particle beam irradiation apparatus 失效
    带电粒子束照射装置

    公开(公告)号:US06172364B2

    公开(公告)日:2001-01-09

    申请号:US09118924

    申请日:1998-07-20

    CPC classification number: H01J3/40 H01J37/02 H01J2237/0213

    Abstract: A reflection prevention board of a charged particle beam irradiation apparatus of the present invention comprises a laminate sheet having a plurality of thin films and a plurality of microholes through the laminate sheet. According to the present invention the reflection prevention board can be manufactured at a lower cost, the reason being that it is easier to form microholes in the thin films and then laminate these thin films in an aligned relation than to drill holes through a thicker sheet. By doing so it is possible to achieve a better yield. Further, much deeper microholes, which might not otherwise be achieved on a thick sheet, can be formed by using more thin films and a reflection prevention effect can be improved by doing so.

    Abstract translation: 本发明的带电粒子束照射装置的反射防止板包括具有多个薄膜的叠层片和通过层压片的多个微孔。 根据本发明,可以以更低的成本制造防反射板,其原因是在薄膜中更容易形成微孔,然后以与排列较深的片钻孔的排列关系层叠这些薄膜。 通过这样做,可以实现更好的产量。 此外,可以通过使用更多的薄膜来形成在厚片材上可能不能实现的更深的微孔,并且通过这样做可以改善防反射效果。

    Method of observing a sample by a transmission electron microscope
    8.
    发明授权
    Method of observing a sample by a transmission electron microscope 失效
    通过透射电子显微镜观察样品的方法

    公开(公告)号:US06777679B2

    公开(公告)日:2004-08-17

    申请号:US10353039

    申请日:2003-01-29

    CPC classification number: G01N23/04 H01J37/265 H01J2237/216

    Abstract: Automatically corrected is a movement of a field of view caused upon changing a magnification. A field of view is searched for with a first magnification. A sample stage coordinate of a designated subject of recording is computed, for storage, on a transmission electron beam image of a sample displayed on an image display section. A subject-of-recording image is cut out of the transmission electron beam image of the sample in the first magnification and stored as a first image. The magnification of the transmission electron microscope is set to a magnification twice a magnification in the recording mode, to move the sample stage to the stored sample stage coordinate of the subject of recording. The transmission electron beam image in the second magnification is captured with the same number of pixels as the first image to compute a movement amount of between the two images from a correlation intensity of the first and second images. Then, the transmission electron beam image in the second magnification is corrected in position with respect to imaging means such that the movement amount is zero, to store an obtained transmission electron beam image (S29).

    Abstract translation: 自动校正是在改变放大倍数时引起的视野的移动。 以第一放大率搜索视野。 计算指定的记录对象的样本台坐标,以存储在显示在图像显示部分上的样本的透射电子束图像上。 以第一倍率从样本的透射电子束图像中切下记录图像,并作为第一图像存储。 在记录模式下,透射电子显微镜的倍率设定为放大倍率的两倍,将样品台移动到记录对象的存储的样品台坐标。 以与第一图像相同数量的像素捕获第二放大率的透射电子束图像,以从第一和第二图像的相关强度计算两个图像之间的移动量。 然后,相对于成像装置将第二倍率的透射电子束图像校正到移动量为零的位置,以存储获得的透射电子束图像(S29)。

    Analyzer/observer
    9.
    发明授权
    Analyzer/observer 失效
    分析仪/观察者

    公开(公告)号:US06762422B2

    公开(公告)日:2004-07-13

    申请号:US10148513

    申请日:2002-09-24

    CPC classification number: H01J37/20 H01J2237/20292

    Abstract: On a sample base 1 disposed within a vacuum container is provided a scale S(1). . . S(N), where in an actual distance of the sample base is monitored by observing the scale trough an optical system for exclusive use thereof, which can catch it within a field of view. With this, it is possible to position a foreign body, as a target of analysis, which is analyzed or observed by a first analysis/observation device, so that it necessarily falls within a field of view of a second analysis/observation device, thereby realizing quick and automatic delivery of the samples when observing the foreign body on the sample by plural numbers of the devices.

    Abstract translation: 在设置在真空容器内的样品台1上设置刻度S(1)。 。 。 S(N),其中通过观察通过其专用的光学系统的尺度监视样本基座的实际距离,其可以在视场内捕获它。因此,可以定位异物 作为分析对象,由第一分析/观察装置进行分析或观察,使其必然落在第二分析/观察装置的视野内,从而在观察样品时快速自动地传送样品 异物在样品上由多个设备。

    Analysis of semiconductor surfaces by secondary ion mass spectrometry and methods
    10.
    发明授权
    Analysis of semiconductor surfaces by secondary ion mass spectrometry and methods 失效
    通过二次离子质谱法分析半导体表面和方法

    公开(公告)号:US06713760B2

    公开(公告)日:2004-03-30

    申请号:US10440587

    申请日:2003-05-19

    Inventor: Eugene P. Marsh

    CPC classification number: G01N23/2258 H01J37/252 H01J2237/2527

    Abstract: A method for a mass spectrometric determination of contaminant components of a thin oxide surface layer of a semiconductor wafer use a movable mechanical stage to scan and raster a large area of the wafer in a continuous scanning motion. The mass of analyte is greatly increased, resulting in improved sensitivity to trace components in the surface layer by a factor of 10-100 or more. A light beam interferometer is used to determine non-planarity from e.g., warping of the wafer and provide a correction by maintaining a constant separation between the wafer and the extraction plate or adjusting the electrical bias of the wafer relative to the extraction bias.

    Abstract translation: 用于质量测定半导体晶片的薄氧化物表面层的污染物组分的方法使用可移动机械级以连续的扫描运动扫描和扫描大面积的晶片。 分析物的质量大大增加,导致对表面层中的痕量组分的改善的灵敏度提高10-100倍。 使用光束干涉仪来确定例如晶片翘曲的非平面性,并且通过保持晶片和提取板之间的恒定间隔或调整晶片相对于提取偏压的偏置来提供校正。

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