公开(公告)号：US20120132801A1

公开(公告)日：2012-05-31

申请号：US13366874

申请日：2012-02-06

申请人： Yuko IWABUCHI ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko IWABUCHI ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

摘要翻译： 通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

公开(公告)号：US07439506B2

公开(公告)日：2008-10-21

申请号：US11798239

申请日：2007-05-11

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： H01J37/256 ,  H01J37/244

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

摘要翻译： 通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

公开(公告)号：US07439504B2

公开(公告)日：2008-10-21

申请号：US11176344

申请日：2005-07-08

申请人： Takashi Hiroi ,  Asahiro Kuni ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroyuki Shinada ,  Yasuhiro Gunji ,  Atsuko Takafuji

发明人： Takashi Hiroi ,  Asahiro Kuni ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroyuki Shinada ,  Yasuhiro Gunji ,  Atsuko Takafuji

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/24465 ,  H01J2237/2817

摘要： A pattern inspection method and apparatus in which a charged particle beam is irradiated onto a surface of a specimen on which a pattern is formed, plural sensors simultaneously detect secondary particles emanated from the surface of the specimen by the irradiation, signals outputted from each sensor of the plural sensors which simultaneously detect the secondary particles are added, an image of the surface of the specimen on which the pattern is obtained from the added signals, and the image is processed to detect a defect of the pattern.

摘要翻译： 一种图案检查方法和装置，其中带电粒子束照射到形成有图案的样本的表面上，多个传感器同时检测通过照射从样品表面发出的二次颗粒，从每个传感器输出的信号 添加同时检测二次粒子的多个传感器，从附加的信号中添加从其获得图案的样本的表面的图像，并且处理图像以检测图案的缺陷。

公开(公告)号：US07397031B2

公开(公告)日：2008-07-08

申请号：US11452989

申请日：2006-06-15

申请人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

发明人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

IPC分类号： H01J37/28

CPC分类号： G01N23/225 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.

摘要翻译： 使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统 光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。 第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。 在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

公开(公告)号：US06979823B2

公开(公告)日：2005-12-27

申请号：US10865850

申请日：2004-06-14

申请人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC分类号： G01N23/20 ,  G01N23/225 ,  G01Q20/02 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q30/20 ,  H01J37/26 ,  H01L21/027 ,  H01L21/66 ,  H01J37/244

CPC分类号： H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

摘要翻译： 具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。 通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

公开(公告)号：US06768113B2

公开(公告)日：2004-07-27

申请号：US10309275

申请日：2002-12-26

申请人： Hiroyuki Suzuki ,  Hiroyuki Shinada ,  Atsuko Takafuji ,  Yasutsugu Usami ,  Shuji Sugiyama

发明人： Hiroyuki Suzuki ,  Hiroyuki Shinada ,  Atsuko Takafuji ,  Yasutsugu Usami ,  Shuji Sugiyama

IPC分类号： H01J3726

CPC分类号： H01J37/28 ,  H01J2237/082 ,  H01J2237/2826

摘要： Heights of a sample are calibrated by setting a calibrating substrate on a stage and then irradiating a charged particle beam onto standard marks provided on at least two kinds of surfaces having different substrate heights. Secondary charged particles produced from said irradiated standard marks on the substrate are and detected and a surface height of the irradiated portion of the substrate measured. The difference in height between the standard marks is set to be in a range containing an extent, over the entire sample, to which the height of the sample varies due to warping.

摘要翻译： 通过在台上设置校准基板，然后将带电粒子束照射到设置在具有不同衬底高度的至少两种表面上的标准标记上来校准样品的高度。 并且测量从衬底上的所述照射的标准标记产生的二次带电粒子并测量衬底的照射部分的表面高度。 标准标记之间的高度差被设定在包含整个样品的范围内，样品的高度由于翘曲而变化。

公开(公告)号：US07952074B2

公开(公告)日：2011-05-31

申请号：US12190388

申请日：2008-08-12

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01N23/22

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefore, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 因此，电路图案检查方法和其中待检查的样品的待检查部分的整体被制成处于预定的改变状态的装置，被检查部分被成像高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US07232996B2

公开(公告)日：2007-06-19

申请号：US11319279

申请日：2005-12-29

申请人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

发明人： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

摘要翻译： 通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

公开(公告)号：US07098455B2

公开(公告)日：2006-08-29

申请号：US10404451

申请日：2003-04-02

申请人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

发明人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

IPC分类号： H01J37/28

CPC分类号： G01N23/225 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspecting instrument includes an electron-optical system for irradiating an electron beam on a sample, an electron beam deflector, a detector for detecting secondary charged particles from the sample, and a mode setting unit for switching between a first mode and a second mode. An electron beam current is larger in the first mode than in the second mode, and an electron beam scanning speed is higher in the first mode than in the second mode. The circuit pattern inspecting instrument is configured so that first the sample is observed in the first mode, then a particular position on the sample is selected based on image data produced by an output of the detector in the first mode, and then the particular position on the sample is observed in the second mode.

公开(公告)号：US20060017014A1

公开(公告)日：2006-01-26

申请号：US11234197

申请日：2005-09-26

申请人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC分类号： G21G5/00

CPC分类号： H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.