Invention Grant
- Patent Title: Method for fabricating memory unit with T-shaped gate
- Patent Title (中): 用T形门制造存储单元的方法
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Application No.: US10435447Application Date: 2003-05-09
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Publication No.: US06770532B2Publication Date: 2004-08-03
- Inventor: Ying-Cheng Chuang , Chung-Lin Huang , Chi-Hui Lin
- Applicant: Ying-Cheng Chuang , Chung-Lin Huang , Chi-Hui Lin
- Priority: TW91118387A 20020815
- Main IPC: H01L21336
- IPC: H01L21336

Abstract:
A method for fabricating a memory unit with T-shaped gate. A semiconductor substrate forming a dielectric layer, a first opening, and a second opening is provided in a CMOS process. A silicate glass spacer is formed on the sidewall of the first opening and is thermally oxidized to form a light doped area under the silicate glass spacer. The silicate glass spacer is removed. An insulating spacer is formed on the sidewall of the first opening. A first spacer is formed on a sidewall of the second opening. N-type conducting spacers are formed respectively on sidewalls of the insulating spacer and the first spacer. Gate dielectric layers are formed respectively in the first opening and the second opening. A P-type conducting layer fills with the first opening and the second opening, and a second spacer is formed on a sidewall of a conducting spacer of the second opening.
Public/Granted literature
- US20040033657A1 Method for fabricating memory unit with T-shaped gate Public/Granted day:2004-02-19
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