Invention Grant
- Patent Title: ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit
- Patent Title (中): ZnOSSe化合物半导体，使用半导体的集成电路及其制造方法以及集成电路
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Application No.: US10234160Application Date: 2002-09-05
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Publication No.: US06770913B2Publication Date: 2004-08-03
- Inventor: Kakuya Iwata , Shigeru Niki , Paul Fons , Akimasa Yamada , Koji Matsubara
- Applicant: Kakuya Iwata , Shigeru Niki , Paul Fons , Akimasa Yamada , Koji Matsubara
- Priority: JP2001-269497 20010905
- Main IPC: H01L3300
- IPC: H01L3300
Abstract:
A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.
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