公开(公告)号：US08304804B2

公开(公告)日：2012-11-06

申请号：US12601248

申请日：2008-05-13

申请人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

发明人： Hajime Shibata ,  Hitoshi Tampo ,  Koji Matsubara ,  Akimasa Yamada ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Shigeru Niki

IPC分类号： H01L33/00

CPC分类号： H01L33/28

摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x

摘要翻译： 本发明的目的在于提高ZnO系光半导体装置的发光效率。 光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光 电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x

公开(公告)号：US08299510B2

公开(公告)日：2012-10-30

申请号：US12525357

申请日：2008-02-01

申请人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

发明人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit formed on a substrate; and a photoelectric conversion unit including a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元; 以及光电转换单元，其包括设置在电路单元上的下电极层，放置在下电极层上并用作光吸收层的黄铜矿结构的化合物半导体薄膜和放置在化合物上的光透明电极层 半导体薄膜，其中下电极层，化合物半导体薄膜和光透明电极层在电路单元上依次层叠。

公开(公告)号：US20090217969A1

公开(公告)日：2009-09-03

申请号：US12084281

申请日：2006-10-31

申请人： Osamu Matsushima ,  Masaki Takaoka ,  Shogo Ishizuka ,  Shigeru Niki ,  Keiichiro Sakurai

发明人： Osamu Matsushima ,  Masaki Takaoka ,  Shogo Ishizuka ,  Shigeru Niki ,  Keiichiro Sakurai

IPC分类号： H01L31/00 ,  H01L31/0272

CPC分类号： H01L31/0322 ,  H01L27/14609 ,  H01L27/14692 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： Disclosed is a method for manufacturing a photoelectric converter wherein a lower electrode layer, a compound semiconductor thin film having a chalcopyrite structure which serves as a light absorptive layer and a light-transmitting electrode layer that are laminated to form layers are each patterned by photolithography, thereby minimizing damages to the crystals of the compound semiconductor thin film.

摘要翻译： 公开了一种用于制造光电转换器的方法，其中，通过光刻将每个图案化下层电极层，具有用作光吸收层的黄铜矿结构的化合物半导体薄膜和层叠以形成层的透光电极层， 从而最小化对化合物半导体薄膜的晶体的损害。

公开(公告)号：US20050284518A1

公开(公告)日：2005-12-29

申请号：US11159233

申请日：2005-06-23

申请人： Akimasa Yamada ,  Hitoshi Tampo ,  Koji Matsubara ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Kakuya Iwata

发明人： Akimasa Yamada ,  Hitoshi Tampo ,  Koji Matsubara ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Kakuya Iwata

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/0749 ,  Y02E10/541

摘要： A solar cell which comprises a back metal electrode and a light-absorbing layer comprising a p-type CIGS semiconductor on a substrate in this order, wherein the solar cell further comprises a p-type or low carrier concentration n-type semiconductor layer comprising ZnO between the light-absorbing layer and the back metal electrode, and a process for producing the solar cell.

摘要翻译： 一种太阳能电池，其特征在于，包括背面金属电极和在基板上依次包含p型CIGS半导体的光吸收层，其中所述太阳能电池还包括p型或低载流子浓度的n型半导体层，其包含ZnO 在光吸收层和背面金属电极之间，以及太阳能电池的制造方法。

公开(公告)号：US06531408B2

公开(公告)日：2003-03-11

申请号：US09939720

申请日：2001-08-28

申请人： Kakuya Iwata ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara ,  Shigeru Niki ,  Ken Nakahara

发明人： Kakuya Iwata ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara ,  Shigeru Niki ,  Ken Nakahara

IPC分类号： H01L2131

CPC分类号： H01L33/0087 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631

摘要： A substrate such as a sapphire substrate or the like is set to a molecular beam epitaxy (MBE) apparatus. Next, the temperature of the substrate is elevated to the temperature which is lower than the temperature at which a predetermined ZnO based oxide semiconductor layer (i.e. function layer) is grown (S1). Then, raw materials containing oxygen radical is irradiated to the substrate to grow a buffer layer made of ZnO based oxide semiconductor (S2). Subsequently, the irradiation of oxygen radical is stopped so as to eliminate the influence of oxygen onto the buffer layer (S3). Then, the temperature of the substrate is elevated to the temperature at which the predetermined ZnO based oxide semiconductor layer is grown (S4). After that, raw materials containing oxygen radical is irradiated so as to sequentially grow a ZnO based oxide semiconductor layer as a function layer (S5). As a result, a ZnO based oxide semiconductor layer with low concentration of residual carrier can be grown, and a semiconductor light emitting device such as light emitting diode and laser diode with high light emitting characteristics can be obtained.

公开(公告)号：US4628548A

公开(公告)日：1986-12-16

申请号：US740127

申请日：1985-05-31

申请人： Masahiro Kurosawa ,  Shigeru Niki ,  Shigenari Kadomatsu ,  Motoki Moroi ,  Takao Yuasa ,  Masami Iida ,  Tetsuhiro Katamune ,  Akiyoshi Seki ,  Kazutaka Ide

发明人： Masahiro Kurosawa ,  Shigeru Niki ,  Shigenari Kadomatsu ,  Motoki Moroi ,  Takao Yuasa ,  Masami Iida ,  Tetsuhiro Katamune ,  Akiyoshi Seki ,  Kazutaka Ide

IPC分类号： E03D9/08 ,  G05B19/40 ,  A47K3/20 ,  A47K4/00

CPC分类号： G05B19/40 ,  E03D9/08 ,  G05B2219/37322

摘要： A device for moving a cleansing nozzle connected to a water supply system includes an elongated nozzle, a cylinder in which the nozzle is axially slidable, a motor having an output shaft, a drum body mounted on the output shaft, the drum body having a cylindrical rim surface and a sectoral recess extending from the surface, a sectoral insert disposed in the recess and having a partial cylindrical surface conforming to and forming a continuation of the cylindrical rim surface, and a leaf spring having one end connected to the nozzle and the other end held between the drum body and the sectoral insert such that rotation of the drum body extends and withdraws the nozzle longitudinally as the leaf spring unwraps and wraps around the drum body. The method includes counting the number of cycles of the frequency of the electric power supplied to the motor, determining the actual position of the nozzle on the basis of the counted pulses, establishing a predetermined position of the nozzle, comparing the actual position with the predetermined position, and transmitting the results of the comparison to a power circuit for the motor to turn the motor on and off so that the motor thereby positions the slidable nozzle at the predetermined position.

摘要翻译： 用于移动连接到供水系统的清洁喷嘴的装置包括细长喷嘴，其中喷嘴可轴向滑动的圆筒，具有输出轴的马达，安装在输出轴上的滚筒本体，滚筒主体具有圆柱形 边缘表面和从表面延伸的扇形凹部，设置在凹部中的扇形插入件，并且具有与圆柱形边缘表面一致并形成连续的部分圆柱形表面;以及板簧，其一端连接到喷嘴和另一端 端部保持在鼓体和扇形插入件之间，使得当主体围绕卷筒体折叠并卷绕时，鼓体的旋转在纵向延伸并缩回。 该方法包括对提供给电动机的电力频率的周期数进行计数，基于计数脉冲确定喷嘴的实际位置，建立喷嘴的预定位置，将实际位置与预定的 位置，并将比较结果传送给用于马达的电源电路，以使马达开启和关闭，从而马达从而将可滑动喷嘴定位在预定位置。

公开(公告)号：US06281036B1

公开(公告)日：2001-08-28

申请号：US09414495

申请日：1999-10-08

申请人： Shigeru Niki ,  Akimasa Yamada ,  Paul Fons ,  Hiroyuki Oyanagi

发明人： Shigeru Niki ,  Akimasa Yamada ,  Paul Fons ,  Hiroyuki Oyanagi

IPC分类号： H01L2100

CPC分类号： H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A method of fabricating Cu&agr;(InxGa1−x)&bgr;(SeyS1−y)&ggr; films for solar cells includes forming an electrode on a substrate and supplying the substrate and electrode with Cu, In, Ga, Se, and S to form a Cu&agr;(InxGa1−x)&bgr;(SeyS1−y)&ggr; film. Simultaneously with the supplying of Cu, In, Ga, Se and S, the substrate is supplied with water vapor or a gas that contains a hydroxyl group.

摘要翻译： 制造用于太阳能电池的Cualpha（In x Ga 1-x）β（SeyS 1-y）γ膜的方法包括在衬底上形成电极并向Cu，In，Ga，Se和S提供衬底和电极以形成Cualpha InxGa1-x）β（SeyS1-y）γ膜。 在供给Cu，In，Ga，Se和S的同时，向基板供给水蒸气或含有羟基的气体。

公开(公告)号：US5573059A

公开(公告)日：1996-11-12

申请号：US305942

申请日：1994-09-15

申请人： Shotaro Hamamoto ,  Shigeru Niki ,  Atsushi Nagasawa ,  Masao Isshiki ,  Yoichiro Kobayashi ,  Jitsuo Ikeya

发明人： Shotaro Hamamoto ,  Shigeru Niki ,  Atsushi Nagasawa ,  Masao Isshiki ,  Yoichiro Kobayashi ,  Jitsuo Ikeya

IPC分类号： F24F1/00 ,  F24F13/30 ,  F28F13/12

CPC分类号： F24F13/30 ,  F24F1/0007 ,  F24F1/0025 ,  F24F2001/0048

摘要： An air conditioning machine has a unit main body having an inlet port and an outlet port. The unit main body includes a cross flow fan, having a circular cross section, for introducing indoor air into the unit main body through the inlet port and blowing the air into the room. A heat exchanger is arranged on an indoor air introducing side of the cross flow fan and bent at a portion along a longitudinal direction of the heat exchanger at an acute angle. The heat exchanger has a front side heat exchanger located on a front side of the air conditioning machine and curved along the circular cross section of the cross flow fan and a rear side heat exchanger located on a rear side thereof.

摘要翻译： 空调机具有具有入口和出口的单元主体。 单元主体包括具有圆形横截面的横流风扇，用于通过入口将室内空气引入单元主体并将空气吹入室内。 在交叉流风扇的室内空气导入侧设置有热交换器，并以锐角沿着热交换器的长度方向的一部分弯曲。 热交换器具有位于空调机的前侧的前侧热交换器，并且沿着横流风扇的圆形横截面弯曲，位于其后侧的后侧热交换器。

公开(公告)号：US20110023963A1

公开(公告)日：2011-02-03

申请号：US12922996

申请日：2009-03-19

申请人： Shogo Ishizuka ,  Shigeru Niki ,  Nobuaki Kido ,  Hiroyuki Honmoto

发明人： Shogo Ishizuka ,  Shigeru Niki ,  Nobuaki Kido ,  Hiroyuki Honmoto

IPC分类号： H01L31/032 ,  H01L31/18

CPC分类号： H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： There is provided a solar cell in which a lower electrode layer, a photoelectric conversion layer having a chalcopyrite structure that includes a Group Ib element, a Group IIIb element, and a Group VIb element, and an upper electrode layer are sequentially formed on top of a substrate, wherein the solar cell is provided with a silicate layer between the substrate and the lower electrode layer.

摘要翻译： 提供了一种太阳能电池，其中下电极层，具有包含第Ib族元素，IIIb族元素和VIb族元素的黄铜矿结构的光电转换层和上电极层依次形成在 衬底，其中所述太阳能电池在所述衬底和所述下电极层之间设置有硅酸盐层。

公开(公告)号：US07605012B2

公开(公告)日：2009-10-20

申请号：US11166254

申请日：2005-06-27

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。