发明授权
- 专利标题: Under bump metallization structure
- 专利标题(中): 凸块下金属化结构
-
申请号: US10462268申请日: 2003-06-16
-
公开(公告)号: US06770958B2公开(公告)日: 2004-08-03
- 发明人: Chung Yu Wang , Chender Huang , Pei-Haw Tsao , Ken Chen , Hank Huang
- 申请人: Chung Yu Wang , Chender Huang , Pei-Haw Tsao , Ken Chen , Hank Huang
- 主分类号: H01L23495
- IPC分类号: H01L23495
摘要:
An under bump metallurgy (UBM) structure is described. Two UBM mask processes are utilized. First, a top layer of copper (Cu) and/or a middle layer of nickel-vanadium (NiV) or chrome-copper (CrCu) is personalized by standard photoprocessing and etching steps utilizing a bump based size mask. This is followed by patterning an underlying seed layer with a second, larger mask, thereby preventing damage to the aluminum cap and seed layer undercut during the etching process.