摘要:
An enhanced wafer level chip scale packaging (WLCSP) copper electrode post is described having one or more pins that protrude from the top of the electrode post. When the solder ball is soldered onto the post, the pins are encapsulated within the solder material. The pins not only add shear strength to the soldered joint between the solder ball and the electrode post but also create a more reliable electrical connection due to the increased surface area between the electrode post/pin combination and the solder ball. Moreover, creating an irregularly shaped solder joint retards the propagation of cracks that may form in the intermetal compounds (IMC) layer formed at the solder joint.
摘要:
A package structure includes a substrate; a die over and flip bonded on the substrate; a heat sink over the die; and one or more spacer separating the heat sink from the substrate.
摘要:
A system and method for forming an underbump metallization (UBM) is presented. A preferred embodiment includes a raised UBM which extends through a passivation layer so as to make contact with a contact pad while retaining enough of the passivation layer between the contact pad and the UBM to adequately handle the peeling and shear stress that results from CTE mismatch and subsequent thermal processing. The UBM contact is preferably formed in either an octagonal ring shape or an array of contacts.
摘要:
A method for fabricating a semiconductor package is provided. In one embodiment, a semiconductor chip having a plurality of exposed conductive layers thereon is provided. A first substrate having a first surface and a second surface is provided, the first surface having a plurality of exposed via plugs thereunder. The semiconductor chip is bonded to the first substrate, wherein the plurality of exposed conductor layers are aligned and in contact with the surfaces of the exposed via plugs. A portion of the second surface of the first substrate is then removed to expose the opposite ends of the plurality of via plugs. A plurality of UBM layers is formed on the surfaces of the opposite ends of the plurality of via plugs. A plurality of solder bumps is formed and mounted on the UBM layers. A second substrate having a first surface and a second surface is provided, the solder bumps being mounted to the first surface of the second substrate. A plurality of solder balls is formed and mounted to the second surface of the second substrate. A third substrate is mounted to the solder balls.
摘要:
A heat sink is presented for dissipating heat from an integrated circuit (IC). The heat sink is made of a heat conductive material having a generally planar shape and adapted to receive an IC chip on a bottom surface and adapted to be in thermal connection with the IC chip. The heat sink has a plurality of fins extending from and above a top surface of the heat sink and a plurality of slots providing fluid communication between the top surface and the bottom surface. The plurality of slots allow for air circulation below the heat sink and around the IC and other proximate components to increase heat dissipation.
摘要:
A system-in-package (SiP) package is provided. In one embodiment, the SiP package comprises a substrate having a first surface and a second surface opposite the first surface, the substrate having a set of bond wire studs on bond pads formed on the second surface thereof; a first semiconductor chip having a first surface and a second surface opposite the first surface, wherein the first surface of the first semiconductor chip is mounted to the second surface of the substrate by means of solder bumps; an underfill material disposed between the first semiconductor chip and the substrate, encapsulating the solder bumps; a second semiconductor chip having a first surface and a second surface opposite the first surface, wherein the first surface of the second semiconductor chip is mounted to the second surface of the first semiconductor chip; and a set of bond wires electrically coupled from the second semiconductor chip to the set of bond wire studs on the substrate.
摘要:
A heat spreader and package structure utilizing the same. The heat spreader is embedded in an encapsulant of a package and above a chip therein, wherein the package has a substrate, having a molding gate, and the chip has a center and a corner which is the farthest from the molding gate. The spreader includes a base with a hollow portion therethrough, a plurality of support leads, protruding from the base, on the inner edge, and a cap plate, having a hole at least directly above a region between the center and the corner of the chip, fixed by the support leads to be above the hollow portion, the cap plate.
摘要:
A method for forming a semiconductor package is provided. In one embodiment, the method comprises providing a semiconductor substrate having at least one bump pad formed thereon. A solder mask layer is provided above the bump pad, the solder mask layer having at least one opening formed therein exposing a portion of the bump pad. A layer of solder wettable material is formed on the exposed surface of the bump pad and the sidewalls and substantially on the comers of the solder mask layer. A solder material is deposited above the layer of solder wettable material and portions of the solder mask layer and the solder material is reflown to create a solder bump.
摘要:
A heat spreader and package structure utilizing the same. The heat spreader is embedded in an encapsulant of a package and above a chip therein, wherein the package has a substrate, having a molding gate, and the chip has a center and a corner which is the farthest from the molding gate. The spreader includes a base with a hollow portion therethrough, a plurality of support leads, protruding from the base, on the inner edge, and a cap plate, having a hole at least directly above a region between the center and the corner of the chip, fixed by the support leads to be above the hollow portion, the cap plate.
摘要:
Described is a semiconductor device having improved semiconductor bond pad reliability and methods of manufacturing thereof. The semiconductor device includes a layer formed over an integrated circuit on a semiconductor substrate. The first layer includes a conductive portion and an insulating portion. A second layer is then formed over the first layer and includes a conductive portion corresponding to the first layer's conductive portion and an insulating portion corresponding to the first layer's insulating portion. A bond pad is then formed over the first and second layers such that the bond pad is substantially situated above the conductive portions and the insulating portions of the first and second layers. A bonding ball is then formed on the bond pad substantially above the conduction portion of the first and second layers.