发明授权
US06774462B2 Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio
有权
包括具有不同氮比的双重氮化硅层的半导体器件
- 专利标题： Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio
- 专利标题（中）： 包括具有不同氮比的双重氮化硅层的半导体器件
-
申请号： US10278882申请日： 2002-10-24
-
公开(公告)号： US06774462B2公开(公告)日： 2004-08-10
- 发明人: Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
- 申请人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
- 优先权： JP2002-155740 20020529
- 主分类号： H01L2358
- IPC分类号： H01L2358
摘要：
Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.