Invention Grant
- Patent Title: High frequency semiconductor device
- Patent Title (中): 高频半导体器件
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Application No.: US10090610Application Date: 2002-03-06
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Publication No.: US06774484B2Publication Date: 2004-08-10
- Inventor: Yutaka Mimino , Osamu Baba , Yoshio Aoki , Muneharu Gotoh
- Applicant: Yutaka Mimino , Osamu Baba , Yoshio Aoki , Muneharu Gotoh
- Priority: JP2001-102613 20010330
- Main IPC: H01L2334
- IPC: H01L2334

Abstract:
A multilayer wiring structure for MMICs includes a power-supply wiring formed of a multilayer wiring (a plurality of power-supply lines). The wires are interconnected by throughholes. A power-supply current is divided and supplied to the lines. A large current can be supplied to the entirety of the multilayer wiring, even when the width of each of the lines is reduced. The multilayer wiring structure has an improved degree of freedom in the layout of wiring.
Public/Granted literature
- US20020140089A1 High frequency semiconductor device Public/Granted day:2002-10-03
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