发明授权
- 专利标题: Semiconductor display device and method of manufacturing therefor
- 专利标题(中): 半导体显示装置及其制造方法
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申请号: US09502675申请日: 2000-02-11
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公开(公告)号: US06777716B1公开(公告)日: 2004-08-17
- 发明人: Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado
- 申请人: Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado
- 优先权: JP11-033623 19990212
- 主分类号: H01L2996
- IPC分类号: H01L2996
摘要:
In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.