发明授权
- 专利标题: Semiconductor memory device and method of manufacturing the same
- 专利标题(中): 半导体存储器件及其制造方法
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申请号: US09986777申请日: 2001-11-09
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公开(公告)号: US06778424B2公开(公告)日: 2004-08-17
- 发明人: Yoshihisa Iwata , Takashi Ohsawa , Takashi Yamada
- 申请人: Yoshihisa Iwata , Takashi Ohsawa , Takashi Yamada
- 优先权: JP2001-041828 20010219; JP2001-191781 20010625; JP2001-328204 20011025
- 主分类号: G11C1124
- IPC分类号: G11C1124
摘要:
A semiconductor memory device having MIS transistors to constitute memory cells (MC), each of the MIS transistors including a semiconductor layer (12), a source region (15) formed in the semiconductor layer, a drain region (14) formed apart from the source region in the semiconductor layer, the semiconductor layer between the source region and the drain region serving as a channel body in a floating state, a main gate (13) provided between the source region and the drain region to form a channel in the channel body; and an auxiliary gate (20) provided separately from the main gate to control a potential of the channel body by capacitive coupling, the auxiliary gate being driven in synchronization with the main gate. The MIS transistor has a first data state in which the channel body is set at a first potential and a second data state in which the channel body is set at a second potential.