发明授权
US06785954B2 Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor
失效
在底部自旋阀GMR读取传感器上制造引线覆盖层(LOL)的方法
- 专利标题: Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor
- 专利标题(中): 在底部自旋阀GMR读取传感器上制造引线覆盖层(LOL)的方法
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申请号: US10124004申请日: 2002-04-17
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公开(公告)号: US06785954B2公开(公告)日: 2004-09-07
- 发明人: Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
- 申请人: Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
- 主分类号: G11B5127
- IPC分类号: G11B5127
摘要:
A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
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