- 专利标题: Electronic device and method for fabricating the electronic device
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申请号: US10601470申请日: 2003-06-23
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公开(公告)号: US06787387B2公开(公告)日: 2004-09-07
- 发明人: Kimiya Ikushima , Hiroyoshi Komobuchi , Mikiya Uchida
- 申请人: Kimiya Ikushima , Hiroyoshi Komobuchi , Mikiya Uchida
- 优先权: JP2002-182510 20020624
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A method for fabricating an electronic device includes the steps of: preparing a cavity defining sacrificial layer, at least the upper surface of which is covered with an etch stop layer; forming at least one first opening in the etch stop layer, thereby partially exposing the surface of the cavity defining sacrificial layer; etching the cavity defining sacrificial layer through the first opening, thereby defining a provisional cavity under the etch stop layer and a supporting portion that supports the etch stop layer thereon; and etching away a portion of the etch stop layer, thereby defining at least one second opening that reaches the provisional cavity through the etch stop layer and expanding the provisional cavity into a final cavity.
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