发明授权
- 专利标题: Polymer memory device formed in via opening
- 专利标题(中): 聚合物存储器件形成在通孔中
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申请号: US10614397申请日: 2003-07-07
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公开(公告)号: US06787458B1公开(公告)日: 2004-09-07
- 发明人: Nicholas H. Tripsas , Matthew S. Buynoski , Suzette K. Pangrle , Uzodinma Okoroanyanwu , Angela T. Hui , Christopher F. Lyons , Ramkumar Subramanian , Sergey D. Lopatin , Minh Van Ngo , Ashok M. Khathuria , Mark S. Chang , Patrick K. Cheung , Jane V. Oglesby
- 申请人: Nicholas H. Tripsas , Matthew S. Buynoski , Suzette K. Pangrle , Uzodinma Okoroanyanwu , Angela T. Hui , Christopher F. Lyons , Ramkumar Subramanian , Sergey D. Lopatin , Minh Van Ngo , Ashok M. Khathuria , Mark S. Chang , Patrick K. Cheung , Jane V. Oglesby
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via.