发明授权
- 专利标题: Semiconductor memories
- 专利标题(中): 半导体存储器
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申请号: US10167754申请日: 2002-06-11
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公开(公告)号: US06787835B2公开(公告)日: 2004-09-07
- 发明人: Bryan Atwood , Kazuo Yano , Tomoyuki Ishii , Taro Osabe , Kazumasa Yanagisawa , Takeshi Sakata
- 申请人: Bryan Atwood , Kazuo Yano , Tomoyuki Ishii , Taro Osabe , Kazumasa Yanagisawa , Takeshi Sakata
- 主分类号: H01L27108
- IPC分类号: H01L27108
摘要:
A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two- and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.
公开/授权文献
- US20030227041A1 Semiconductor memories 公开/授权日:2003-12-11