发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
-
申请号： US10394262申请日： 2003-03-24
-
公开(公告)号： US06788565B2公开(公告)日： 2004-09-07
- 发明人: Masashi Agata , Kazunari Takahashi , Masanori Shirahama , Naoki Kuroda , Hiroyuki Sadakata , Ryuji Nishihara
- 申请人： Masashi Agata , Kazunari Takahashi , Masanori Shirahama , Naoki Kuroda , Hiroyuki Sadakata , Ryuji Nishihara
- 优先权： JP2002-083353 20020325
- 主分类号： G11C1140
- IPC分类号： G11C1140
摘要：
A semiconductor memory device has a plurality of memory cells each having a first transistor, a second transistor having a source or drain connected to one portion of the source or drain of the first transistor, and a third transistor having a source or drain connected to the other portion of the source or drain of the first transistor. The first transistor accumulates, in the channel thereof, charges transferred from the second and third transistors.
公开/授权文献
- US20030179629A1 Semiconductor memory device 公开/授权日：2003-09-25