发明授权
- 专利标题： Method for manufacturing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US10193351申请日： 2002-07-10
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公开(公告)号： US06790699B2公开(公告)日： 2004-09-14
- 发明人: Heinz-Georg Vossenberg , Wilhelm Frey
- 申请人： Heinz-Georg Vossenberg , Wilhelm Frey
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A method for manufacturing a semiconductor device includes the steps of providing a substrate, depositing a monocrystalline sacrificial layer onto the substrate, depositing a monocrystalline function layer onto the sacrificial layer, and removing at least part of the sacrificial layer after the function layer depositing step.
公开/授权文献
- US20040009623A1 Method for manufacturing a semiconductor device 公开/授权日：2004-01-15