发明授权
US06794730B2 High performance PNP bipolar device fully compatible with CMOS process
有权
高性能PNP双极器件完全兼容CMOS工艺
- 专利标题： High performance PNP bipolar device fully compatible with CMOS process
- 专利标题（中）： 高性能PNP双极器件完全兼容CMOS工艺
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申请号： US10028002申请日： 2001-12-20
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公开(公告)号： US06794730B2公开(公告)日： 2004-09-21
- 发明人: Youngmin Kim , Shaoping Tang , Seetharaman Sridhar , Amitava Chatterjee
- 申请人： Youngmin Kim , Shaoping Tang , Seetharaman Sridhar , Amitava Chatterjee
- 主分类号： H01L27082
- IPC分类号： H01L27082
摘要：
A pnp bipolar junction transistor is formed with improved emitter efficiency by reducing the depth of the p well implant to increase carrier concentration in the emitter and making the emitter junction deeper to increase minority lifetime in the emitter. The high gain BJT is formed without added mask steps to the process flow. A blanket high energy boron implant is used to suppress the isolation leakage in SRAM in the preferred embodiment.