发明授权
- 专利标题： Metal film pattern and manufacturing method thereof
- 专利标题（中）： 金属膜图案及其制造方法
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申请号： US10454599申请日： 2003-06-05
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公开(公告)号： US06798032B2公开(公告)日： 2004-09-28
- 发明人: Yoshihiro Izumi , Yoshimasa Chikama , Satoshi Kawashima , Takaharu Hashimoto , Itsuji Yoshikawa , Masaaki Ishikawa
- 申请人： Yoshihiro Izumi , Yoshimasa Chikama , Satoshi Kawashima , Takaharu Hashimoto , Itsuji Yoshikawa , Masaaki Ishikawa
- 优先权： JP2001-152635 20010522
- 主分类号： H01L3100
- IPC分类号： H01L3100
摘要：
A SnO2 film having a prescribed pattern feature is formed on a substrate by a wet film-formation technology (e.g., sol-gel method). A Ni film is formed on the SnO2 film by an electroless plating method. The electroless plating method is conducted in the presence of at least one sulfur-containing compound selected from the group consisting of thiosulfates, thiocyanates and sulfur-containing organic compounds.
公开/授权文献
- US20030207567A1 Metal film pattern and manufacturing method thereof 公开/授权日：2003-11-06
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