发明授权
- 专利标题： Negative deep ultraviolet photoresist
- 专利标题（中）： 负深紫外光致抗蚀剂
-
申请号： US10042531申请日： 2002-01-09
-
公开(公告)号： US06800416B2公开(公告)日： 2004-10-05
- 发明人: Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel , Medhat A. Touky
- 申请人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel , Medhat A. Touky
- 主分类号： G03F7004
- IPC分类号： G03F7004
摘要：
The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.
公开/授权文献
- US20030129527A1 Negative deep ultraviolet photoresist 公开/授权日：2003-07-10
信息查询
