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公开(公告)号：US06800416B2
公开(公告)日：2004-10-05
申请号：US10042531
申请日：2002-01-09
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0046 , Y10S430/108
摘要： The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.
摘要翻译： 本发明涉及一种可在碱性水溶液中显影的新型负极深紫外光致抗蚀剂，其包含氟化聚合物，光活性化合物和交联剂。 光致抗蚀剂组合物特别适用于193nm和157nm的曝光波长的图形化。
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公开(公告)号：US20110086312A1
公开(公告)日：2011-04-14
申请号：US12576622
申请日：2009-10-09
申请人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
发明人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
CPC分类号： G03F7/091
摘要： The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is wherein W is selected from (C1-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted is or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n≧2. The invention further relates to a process for using such a composition.
摘要翻译： 本发明涉及能够在含水碱性显影剂中显影的正底部可光成像抗反射涂料组合物，其中抗反射涂料组合物包含含有至少一个具有发色团的重复单元的聚合物和一个具有羟基的重复单元， /或羧基，结构式（7）的乙烯基醚封端的交联剂，以及任选的光酸产生剂和/或酸和/或热酸发生剂，其中结构（7）其中W选自（C1 -C 30）直链，支链或环状的烷基部分，取代或未取代的（C 3 -C 40）脂环烃部分和取代的或未取代的（C 3 -C 40）环烷基亚烷基部分; R选自C1-C10直链或支链亚烷基，n≥2。 本发明还涉及使用这种组合物的方法。
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公开(公告)号：US07595141B2
公开(公告)日：2009-09-29
申请号：US10973633
申请日：2004-10-26
CPC分类号： G03F7/40
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
摘要翻译： 本发明涉及包含含有氨基的聚合物的光致抗蚀剂图案的水性涂料组合物。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。
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4.发明授权Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物公开(公告)号：US06991888B2
公开(公告)日：2006-01-31
申请号：US10439472
申请日：2003-05-16
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/115
摘要： The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.
摘要翻译： 本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物，能够在深紫外线的曝光波长下成像。 本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。 新型光致抗蚀剂包含a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物 ，其中R 1和R 2 R 5，R 6，R 7，或N R 8，R 9和R 9在本文中定义; m = 1-5; X - 是阴离子，Ar选自萘基，蒽基和结构3，其中R 30，R 31，R SUB > 32，R 33和R 34在本文中定义。
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5.发明授权公开(公告)号：US06723488B2
公开(公告)日：2004-04-20
申请号：US10037161
申请日：2001-11-07
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0397 , G03F7/40 , Y10S430/106
摘要： The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.
摘要翻译： 本发明涉及对深紫外线辐射敏感的光致抗蚀剂组合物，特别是在100-200纳米（nm）范围内敏感的正性工作光致抗蚀剂。 光致抗蚀剂组合物包含：a）不溶于碱性水溶液且包含至少一种酸不稳定基团的聚合物，此外，聚合物基本上是非酚类的，b）能够在辐射时产生酸的化合物，c ）减少电子和离子对光致抗蚀剂图像的影响的添加剂。
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公开(公告)号：US07122291B2
公开(公告)日：2006-10-17
申请号：US10909513
申请日：2004-08-02
CPC分类号： G03F7/0395 , Y10S430/111
摘要： The present invention provides for a photoresist composition comprising a mixture of two different copolymers.
摘要翻译： 本发明提供包含两种不同共聚物的混合物的光致抗蚀剂组合物。
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公开(公告)号：US5843319A
公开(公告)日：1998-12-01
申请号：US902072
申请日：1997-07-29
申请人： Klaus Juergen Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natsumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
发明人： Klaus Juergen Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natsumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
CPC分类号： G03F7/0045 , G03F7/039
摘要： A process for producing a solution of a basic or non-basic sulfonium compound (A) of formulae II-V: ##STR1## wherein R.sup.5, R.sup.6 and R.sup.7 each independently represent a C.sub.1 -C.sub.18 alkyl, aryl or heteroaryl group or an aryl group mono-, di- or tri-substituted with an alkyl, an alkylaryl, an aryl, a halogen, an alkoxy, a phenoxy, a thiophenol, a phenylsulfonyl or a phenylsulphenyl; Y represents (CH.sub.2).sub.n (wherein n is 0 or 1), O or S; R.sup.8 and R.sup.9 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen; R.sup.10 and R.sup.11 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen; n is 5 or 6; and X.sub.2.sup.- represents a basic anion having a pK.sub.B value of -3 to +5; comprising the steps of: (a) dissolving a sulfonium salt (B) in a metal-ion free polar or non-polar solvent to form a solution, said sulfonium salt (B) being selected from said formulae II-V, wherein R.sup.5 to R.sup.11, Y and n of said sulfonium salt (B) have the sane meaning as above and X.sub.2.sup.- represents a non-nucleophilic anion; (b) contacting said solution for a sufficient amount of time with a basic ion-exchange resin having a quaternary ammonium group to replace the anion of (B) with a hydroxide ion and to form a sulfonium hydroxide solution; (c) separating said sulfonium hydroxide solution from the resin; and optionally (d) adding an active hydrogen containing compound or its base-labile precursor to said sulfonium hydroxide solution to yield a solution of the sulfonium compound (A) wherein X.sub.2.sup.- represents a basic anion other than a hydroxy ion.
摘要翻译： 制备式II-V的碱性或非碱性锍化合物（A）的溶液的方法：[SR5R6R7] + X2-Ⅱ其中R5，R6和R7各自独立地 独立地表示C1-C18烷基，芳基或杂芳基或被烷基，烷基芳基，芳基，卤素，烷氧基，苯氧基，苯硫酚，苯基磺酰基或苯基磺酰基单 - ，二 - 或三 - 取代的芳基 苯基磺酰基; Y表示（CH 2）n（其中n为0或1），O或S; R8和R9代表C1-C4烷基，烷氧基或卤素; R10和R11表示C1-C4烷基，烷氧基或卤素; n为5或6; X2-表示pKB值为-3〜+5的碱性阴离子; 包括以下步骤：（a）将锍盐（B）溶解在无金属离子的极性或非极性溶剂中以形成溶液，所述锍盐（B）选自所述式II-V，其中R5至 所述锍盐（B）的R 11，Y和n具有如上所述的正义，X2-表示非亲核阴离子; （b）用具有季铵基团的碱性离子交换树脂将所述溶液接触足够的时间以用氢氧根离子代替（B）的阴离子并形成氢氧化锍溶液; （c）从树脂中分离出氢氧化锍溶液; 和任选地（d）在所述氢氧化锍溶液中加入含活性氢的化合物或其碱不稳定的前体，得到其中X2代表羟基离子以外的碱性阴离子的锍化合物（A）的溶液。
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公开(公告)号：US20120308939A1
公开(公告)日：2012-12-06
申请号：US13153765
申请日：2011-06-06
摘要： The present invention relates to an antireflective coating composition comprising a crosslinking agent, a polymer comprising at least one chromophore group and at least one hydroxyl and/or a carboxyl group, and an additive, further where the additive has structure 1 and comprises at least one arylene-hydroxyl moiety, where Y is selected from an carboxylate anion or sulfonate anion, R1, R2, and R3 are independently selected from unsubstituted C1-C8 alkyl, substituted C1-C8 alkyl, aryl and arylene-hydroxyl; X1, X2, and X3 are independently selected from direct valence bond and C1-C8 alkylene group, and, n=1, 2 or 3. The invention further relates to a process for using the composition.
摘要翻译： 本发明涉及包含交联剂，包含至少一个发色团和至少一个羟基和/或羧基的聚合物和添加剂的抗反射涂料组合物，此外，其中添加剂具有结构1并且包含至少一个 亚芳基 - 羟基部分，其中Y选自羧酸根阴离子或磺酸根阴离子，R 1，R 2和R 3独立地选自未取代的C 1 -C 8烷基，取代的C 1 -C 8烷基，芳基和亚芳基 - 羟基; X1，X2和X3独立地选自直接键键和C1-C8亚烷基，n = 1,2或3.本发明还涉及使用该组合物的方法。
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公开(公告)号：US20090053652A1
公开(公告)日：2009-02-26
申请号：US11844589
申请日：2007-08-24
申请人： Srinivasan Chakrapani , Munirathna Padmanaban , Muthiah Thiyagarajan , Takanori Kudo , David L. Rentkiewicz
发明人： Srinivasan Chakrapani , Munirathna Padmanaban , Muthiah Thiyagarajan , Takanori Kudo , David L. Rentkiewicz
CPC分类号： C08F220/28 , C08F220/18 , G03F7/0397
摘要： Photoresist compositions are disclosed.
摘要翻译： 公开了光致抗蚀剂组合物。
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公开(公告)号：US20120122029A1
公开(公告)日：2012-05-17
申请号：US12944420
申请日：2010-11-11
摘要： The present invention relates to a photoimageable underlayer composition comprising a polymer, a crosslinker comprising a vinyl ether group, and a thermal acid generator comprising a salt of a mono or polycarboxylic acid and an amine, where the amine has a boiling point of at least 150° C. The invention also relates to a process for forming an image in the underlayer comprising the novel composition.
摘要翻译： 本发明涉及一种可光成像底层组合物，其包含聚合物，包含乙烯基醚基团的交联剂和包含单羧酸和多元羧酸盐和胺的热酸产生剂，其中胺的沸点为至少150 本发明还涉及一种用于在包含新组合物的底层中形成图像的方法。
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