Invention Grant
US06800518B2 Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering
有权
通过多孔Si工程形成图案化的绝缘体上硅（SOI）/无硅（SON）复合结构
- Patent Title: Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering
- Patent Title (中): 通过多孔Si工程形成图案化的绝缘体上硅（SOI）/无硅（SON）复合结构
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Application No.: US10334220Application Date: 2002-12-30
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Publication No.: US06800518B2Publication Date: 2004-10-05
- Inventor: Robert E. Bendernagel , Kwang Su Choe , Bijan Davari , Keith E. Fogel , Devendra K. Sadana , Ghavam G. Shahidi , Sandip Tiwari
- Applicant: Robert E. Bendernagel , Kwang Su Choe , Bijan Davari , Keith E. Fogel , Devendra K. Sadana , Ghavam G. Shahidi , Sandip Tiwari
- Main IPC: H01L318234
- IPC: H01L318234
Abstract:
A patterned SOI/SON composite structure and methods of forming the same are provided. In the SOI/SON composite structure, the patterned SOI/SON structures are sandwiched between a Si over-layer and a semiconductor substrate. The method of forming the patterned SOI/SON composite structure includes shared processing steps wherein the SOI and SON structure are formed together. The present invention also provides a method of forming a composite structure which includes buried conductive/SON structures as well as a method of forming a composite structure including only buried void planes.
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