发明授权
US06803275B1 ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices
有权
ONO制造工艺，用于降低闪存器件底部氧化层中的氧空位
- 专利标题： ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices
- 专利标题（中）： ONO制造工艺，用于降低闪存器件底部氧化层中的氧空位
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申请号： US10308518申请日： 2002-12-03
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公开(公告)号： US06803275B1公开(公告)日： 2004-10-12
- 发明人: Jaeyong Park , Hidehiko Shiraiwa , Arvind Halliyal , Jean Y. Yang , Inkuk Kang , Tazrien Kamal , Amir H. Jafarpour
- 申请人： Jaeyong Park , Hidehiko Shiraiwa , Arvind Halliyal , Jean Y. Yang , Inkuk Kang , Tazrien Kamal , Amir H. Jafarpour
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
Process for fabricating a SONOS flash memory device, including in one embodiment, forming a bottom oxide layer of an ONO structure on a semiconductor substrate, wherein the bottom oxide layer has a first oxygen vacancy content; treating the bottom oxide layer to decrease the first oxygen vacancy content to a second oxygen vacancy content; and depositing a dielectric charge-storage layer on the bottom oxide layer. In another embodiment, a process for fabricating a SONOS flash memory device includes forming a bottom oxide layer of an ONO structure on the semiconductor substrate under strongly oxidizing conditions, wherein the bottom oxide layer has a super-stoichiometric oxygen content and an oxygen vacancy content reduced relative to a bottom oxide layer formed by a conventional process; and depositing a dielectric charge-storage layer on the bottom oxide layer.