发明授权
- 专利标题： Method for eliminating via resistance shift in organic ILD
- 专利标题（中）： 消除有机ILD中电阻移位的方法
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申请号： US10137274申请日： 2002-05-01
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公开(公告)号： US06806182B2公开(公告)日： 2004-10-19
- 发明人: Darryl Restaino , Shahab Siddiqui , Erdem Kaltalioglu , Delores Bennett , Chih-Chih Liu , Hsueh-Chung Chen , Tong-Yu Chen , Gwo-Shii Yang , Chiung-Sheng Hsiung
- 申请人： Darryl Restaino , Shahab Siddiqui , Erdem Kaltalioglu , Delores Bennett , Chih-Chih Liu , Hsueh-Chung Chen , Tong-Yu Chen , Gwo-Shii Yang , Chiung-Sheng Hsiung
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
Application of an adhesion promoter to a cap layer and oxidation of the adhesion promoter prior to deposition of an organic interlevel dielectric thereon reduces via resistance problems during thermal cycles of semiconductor wafers embodying multiple levels of metal and organic interlevel dielectrics.
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