发明授权
US06808942B1 Method for controlling a critical dimension (CD) in an etch process
有权
在蚀刻过程中控制临界尺寸（CD）的方法
- 专利标题： Method for controlling a critical dimension (CD) in an etch process
- 专利标题（中）： 在蚀刻过程中控制临界尺寸（CD）的方法
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申请号： US10444345申请日： 2003-05-23
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公开(公告)号： US06808942B1公开(公告)日： 2004-10-26
- 发明人: Nital Patel , Brian Smith , Jeffrey S. Hodges , Dale R. Burrows , Yu-Lun Lin
- 申请人： Nital Patel , Brian Smith , Jeffrey S. Hodges , Dale R. Burrows , Yu-Lun Lin
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
The present invention provides a method for determining resist trim times in an etch process. In one embodiment of the invention, the method for determining resist trim times includes obtaining resist profile data and critical dimension (CD) data of a patterned resist layer using a scatterometer, in a step 520, and then obtaining an estimated trim time of the patterned resist layer using the resist profile data and critical dimension data, in steps 530-550.
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