Invention Grant
US06809352B2 Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices
失效
用于氮化镓半导体器件的硅化钯（PdSi）肖特基电极
- Patent Title: Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices
- Patent Title (中): 用于氮化镓半导体器件的硅化钯（PdSi）肖特基电极
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Application No.: US10329675Application Date: 2002-12-27
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Publication No.: US06809352B2Publication Date: 2004-10-26
- Inventor: Katsunori Nishii , Yoshito Ikeda , Hiroyuki Masato , Kaoru Inoue
- Applicant: Katsunori Nishii , Yoshito Ikeda , Hiroyuki Masato , Kaoru Inoue
- Priority: JP11-262134 19990916
- Main IPC: H01L310328
- IPC: H01L310328
Abstract:
The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.
Public/Granted literature
- US20030107101A1 Semiconductor device and method for fabricating the same Public/Granted day:2003-06-12
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