公开(公告)号：US07585706B2

公开(公告)日：2009-09-08

申请号：US11898951

申请日：2007-09-18

申请人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

发明人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

IPC分类号： H01L21/336

CPC分类号： H01L29/66863 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7783

摘要： The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

摘要翻译： 本发明的半导体器件包括由在衬底上生长的III族氮化物半导体形成的有源区和通过氧化III族氮化物半导体而形成在有源区的周边部分中的绝缘氧化物膜。 在有源区域上，形成与延伸到绝缘氧化膜上并在绝缘氧化膜上具有延伸部分的有源区肖特基接触的栅电极，分别用作源电极和漏电极的欧姆电极形成有 沿着栅电极的栅极长度方向的侧边缘的空间。

公开(公告)号：US06852612B2

公开(公告)日：2005-02-08

申请号：US10323637

申请日：2002-12-20

申请人： Katsunori Nishii ,  Yoshito Ikeda ,  Hiroyuki Masato ,  Kaoru Inoue

发明人： Katsunori Nishii ,  Yoshito Ikeda ,  Hiroyuki Masato ,  Kaoru Inoue

IPC分类号： H01L21/285 ,  H01L21/338 ,  H01L23/48 ,  H01L29/20 ,  H01L29/47 ,  H01L29/812 ,  H01L31/00 ,  H01L33/32 ,  H01L33/40 ,  H01L21/28

CPC分类号： H01L29/475 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/66856 ,  H01L29/66863 ,  H01L29/812 ,  H01L33/32 ,  H01L33/40

摘要： The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.

摘要翻译： 本发明的半导体器件包括：氮化镓（GaN）化合物半导体层; 和形成在GaN化合物半导体层上的肖特基电极，其中肖特基电极含有硅。

公开(公告)号：US06809352B2

公开(公告)日：2004-10-26

申请号：US10329675

申请日：2002-12-27

申请人： Katsunori Nishii ,  Yoshito Ikeda ,  Hiroyuki Masato ,  Kaoru Inoue

发明人： Katsunori Nishii ,  Yoshito Ikeda ,  Hiroyuki Masato ,  Kaoru Inoue

IPC分类号： H01L310328

CPC分类号： H01L29/475 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/66856 ,  H01L29/66863 ,  H01L29/812 ,  H01L33/32 ,  H01L33/40

摘要： The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.

摘要翻译： 本发明的半导体器件包括：氮化镓（GaN）化合物半导体层; 和形成在GaN化合物半导体层上的肖特基电极，其中肖特基电极含有硅。

公开(公告)号：US07307292B2

公开(公告)日：2007-12-11

申请号：US10456901

申请日：2003-06-09

申请人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

发明人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

IPC分类号： H01L31/0336

CPC分类号： H01L29/66462 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/7783

摘要： An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

摘要翻译： 绝缘栅半导体器件具有形成在衬底上的第一氮化物半导体层和通过氧化形成在第一氮化物半导体层上的第二氮化物半导体层而获得的绝缘氧化层。 在绝缘氧化层上形成栅电极。

公开(公告)号：US06774449B1

公开(公告)日：2004-08-10

申请号：US09664555

申请日：2000-09-18

申请人： Katsunori Nishii ,  Yoshito Ikeda ,  Hiroyuki Masato ,  Kaoru Inoue

发明人： Katsunori Nishii ,  Yoshito Ikeda ,  Hiroyuki Masato ,  Kaoru Inoue

IPC分类号： H01L3100

CPC分类号： H01L29/475 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/66856 ,  H01L29/66863 ,  H01L29/812 ,  H01L33/32 ,  H01L33/40

摘要： The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.

摘要翻译： 本发明的半导体器件包括：氮化镓（GaN）化合物半导体层; 和形成在GaN化合物半导体层上的肖特基电极，其中肖特基电极含有硅。

公开(公告)号：US06593193B2

公开(公告)日：2003-07-15

申请号：US10054843

申请日：2002-01-25

申请人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

发明人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

IPC分类号： H01L21336

CPC分类号： H01L29/66462 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/7783

摘要： An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

公开(公告)号：US06770922B2

公开(公告)日：2004-08-03

申请号：US10372979

申请日：2003-02-26

申请人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

发明人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

IPC分类号： H01L2976

CPC分类号： H01L29/513 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device has a first semiconductor layer composed of a group III-V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III-V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.

摘要翻译： 半导体器件具有由III-V族氮化物构成的第一半导体层，通过氧化由位于第一半导体层的栅电极形成区域上的III-V族氮化物构成的第二半导体层而形成的氧化膜， 在氧化膜上形成的绝缘膜具有与氧化膜的组成不同的组成，以及形成在绝缘膜上的栅电极。

公开(公告)号：US20070194295A1

公开(公告)日：2007-08-23

申请号：US11785799

申请日：2007-04-20

申请人： Katsunori Nishii ,  Yoshito Ikeda ,  Kaoru Inoue

发明人： Katsunori Nishii ,  Yoshito Ikeda ,  Kaoru Inoue

IPC分类号： H01L29/06

CPC分类号： H01L29/66462 ,  H01L29/2003

摘要： An active region formed of a Group III nitride semiconductor is formed on a substrate. Then, an electrode is formed on the active region and a protective insulating film is formed on a part of the active region located in the peripheral portion of the electrode by oxidizing the Group III nitride semiconductor.

摘要翻译： 在基板上形成由III族氮化物半导体形成的有源区。 然后，在有源区上形成电极，通过氧化III族氮化物半导体，在位于电极周边部分的有源区的一部分上形成保护绝缘膜。

公开(公告)号：US07122451B2

公开(公告)日：2006-10-17

申请号：US10785944

申请日：2004-02-26

申请人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

发明人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

IPC分类号： H01L21/26 ,  H01L21/28 ,  H01L21/44

CPC分类号： H01L29/66878 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/8126

摘要： A semiconductor device has an active region composed of a group III–V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.

摘要翻译： 半导体器件具有由III-V族氮化物半导体和欧姆电极构成的有源区域和分别形成在有源区域上的栅电极。 有源区域的整个表面暴露于等离子体，使得其中的电子的表面电位低于整个表面不暴露于等离子体的情况。

公开(公告)号：US07037817B2

公开(公告)日：2006-05-02

申请号：US10889028

申请日：2004-07-13

申请人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

发明人： Kaoru Inoue ,  Yoshito Ikeda ,  Yutaka Hirose ,  Katsunori Nishii

IPC分类号： H01L21/4763

CPC分类号： H01L29/513 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device has a first semiconductor layer composed of a group III–V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III–V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.