发明授权
- 专利标题： Segmented power MOSFET of safe operation
- 专利标题（中）： 分段功率MOSFET安全运行
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申请号： US10264038申请日： 2002-10-03
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公开(公告)号： US06815276B2公开(公告)日： 2004-11-09
- 发明人: Philip L. Hower , John Lin , Sameer P. Pendharkar , Steven L. Merchant
- 申请人： Philip L. Hower , John Lin , Sameer P. Pendharkar , Steven L. Merchant
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
Segmented power transistors and fabrication methods are disclosed in which transistor segments are spaced from one another to facilitate thermal diffusion, and in which other electrical devices can be formed in the spaces between transistor segments.
公开/授权文献
- US20040067617A1 Distributed power MOSFET 公开/授权日：2004-04-08
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