发明授权
US06815816B1 Implanted hidden interconnections in a semiconductor device for preventing reverse engineering 失效
在半导体器件中隐藏的互连用于防止逆向工程

Implanted hidden interconnections in a semiconductor device for preventing reverse engineering
摘要:
A camouflaged interconnection for interconnecting two spaced-apart implanted regions of a common conductivity type in an integrated circuit or device and a method of forming same. The camouflaged interconnection comprises a first implanted region forming a conducting channel between the two spaced-apart implanted regions, the conducting channel being of the same common conductivity type and bridging a region between the two spaced-apart regions, and a second implanted region of opposite conductivity to type, the second implanted region being disposed between the two spaced-apart implanted regions of common conductivity type and over lying the conducting channel to camouflage the conducting channel from reverse engineering.
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