发明授权
- 专利标题: Implanted hidden interconnections in a semiconductor device for preventing reverse engineering
- 专利标题(中): 在半导体器件中隐藏的互连用于防止逆向工程
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申请号: US09696826申请日: 2000-10-25
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公开(公告)号: US06815816B1公开(公告)日: 2004-11-09
- 发明人: William M. Clark, Jr. , James P. Baukus , Lap-Wai Chow
- 申请人: William M. Clark, Jr. , James P. Baukus , Lap-Wai Chow
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
A camouflaged interconnection for interconnecting two spaced-apart implanted regions of a common conductivity type in an integrated circuit or device and a method of forming same. The camouflaged interconnection comprises a first implanted region forming a conducting channel between the two spaced-apart implanted regions, the conducting channel being of the same common conductivity type and bridging a region between the two spaced-apart regions, and a second implanted region of opposite conductivity to type, the second implanted region being disposed between the two spaced-apart implanted regions of common conductivity type and over lying the conducting channel to camouflage the conducting channel from reverse engineering.
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