发明授权
- 专利标题： Heterojunction bipolar transistor and method for fabricating the same
- 专利标题（中）： 异质结双极晶体管及其制造方法
-
申请号： US10224468申请日： 2002-08-21
-
公开(公告)号： US06821870B2公开(公告)日： 2004-11-23
- 发明人: Takeshi Takagi , Koichiro Yuki , Kenji Toyoda , Yoshihiko Kanzawa
- 申请人： Takeshi Takagi , Koichiro Yuki , Kenji Toyoda , Yoshihiko Kanzawa
- 优先权： JP11-175046 19990622
- 主分类号： H01L2122
- IPC分类号： H01L2122
摘要：
A heterojunction bipolar transistor is fabricated by stacking a Si collector layer, a SiGeC base layer and a Si emitter layer in this order. By making the amount of a lattice strain in the SiGeC base layer on the Si collector layer 1.0% or less, the band gap can be narrower than the band gap of the conventional practical SiGe (the Ge content is about 10%), and good crystalline can be maintained after a heat treatment. As a result, a narrow band gap base with no practical inconvenience can be realized.