发明授权
- 专利标题： Semiconductor apparatus including insulating layer having a protrusive portion
- 专利标题（中）： 包括具有突出部分的绝缘层的半导体装置
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申请号： US09698168申请日： 2000-10-30
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公开(公告)号： US06822317B1公开(公告)日： 2004-11-23
- 发明人: Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
- 申请人： Kosuke Inoue , Hiroyuki Tenmei , Yoshihide Yamaguchi , Noriyuki Oroku , Hiroshi Hozoji , Shigeharu Tsunoda , Madoka Minagawa , Naoya Kanda , Ichiro Anjo , Asao Nishimura , Akira Yajima , Kenji Ujiie
- 优先权： JP11-307986 19991029; JP2000-134213 20000428; JP2000-134215 20000428
- 主分类号： H01L23495
- IPC分类号： H01L23495
摘要：
A semiconductor apparatus comprising a semiconductor device, an electrically insulating layer formed on the semiconductor device, and an external connection terminal formed on the electrically insulating layer and electrically connected to an electrode of the semiconductor device, wherein a power/ground line and a signal line in a region of from an edge of the electrically insulating layer to a uniform-thickness flat portion of the electrically insulating layer are different in kind of wiring pattern from each other.
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