发明授权
US06828207B2 Method of Fabricating a capacitor structure having hemispherical grains
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制造具有半球形晶粒的电容器结构的方法
- 专利标题： Method of Fabricating a capacitor structure having hemispherical grains
- 专利标题（中）： 制造具有半球形晶粒的电容器结构的方法
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申请号： US10352947申请日： 2003-01-29
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公开(公告)号： US06828207B2公开(公告)日： 2004-12-07
- 发明人: Yoshiki Nagatomo , Shoji Yo , Osamu Nanba , Hiroaki Uchida , Kazuya Suzuki
- 申请人： Yoshiki Nagatomo , Shoji Yo , Osamu Nanba , Hiroaki Uchida , Kazuya Suzuki
- 优先权： JP2002-085759 20020326
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A first insulating layer is formed on semiconductor substrate, and a trench is formed in the first insulating layer. An amorphous silicon layer doped with impurities is formed on a side and bottom walls of the trench. Next, a resist material is partially filled in the trench so that an upper portion of the amorphous silicon layer is exposed. The exposed portion is implanted with impurity ions. After removal of the resist material, the amorphous silicon layer is heat treated so as to grow hemispherical grains on its surface.
公开/授权文献
- US20030186510A1 Seniconductor memory device with capacitor 公开/授权日：2003-10-02
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