发明授权
- 专利标题: Apparatus and method for plasma treatment
- 专利标题(中): 等离子体处理装置及方法
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申请号: US10294838申请日: 2002-11-15
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公开(公告)号: US06828243B2公开(公告)日: 2004-12-07
- 发明人: Kazuki Denpoh
- 申请人: Kazuki Denpoh
- 优先权: JPP2000-35735 20000214
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.
公开/授权文献
- US20030062128A1 Apparatus and method for plasma treatment 公开/授权日:2003-04-03
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