发明授权
US06830945B2 Method for fabricating a non-planar nitride-based heterostructure field effect transistor
失效
用于制造非平面氮化物基异质结场效应晶体管的方法
- 专利标题: Method for fabricating a non-planar nitride-based heterostructure field effect transistor
- 专利标题(中): 用于制造非平面氮化物基异质结场效应晶体管的方法
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申请号: US10386960申请日: 2003-03-12
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公开(公告)号: US06830945B2公开(公告)日: 2004-12-14
- 发明人: Jeong Sun Moon , Paul Hashimoto , Wah S. Wong , David E. Grider
- 申请人: Jeong Sun Moon , Paul Hashimoto , Wah S. Wong , David E. Grider
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An AlN layer is deposited on the at least one layer of semiconductor material. A portion of the AlN layer is removed using a solvent to create a non-planar region with consistent and repeatable results. The at least one layer beneath the AlN layer is insoluble in the solvent and therefore acts as an etch stop, preventing any damage to the at least one layer beneath the AlN layer. Furthermore, should the AlN layer incur any surface damage as a result of the reactive ion etching, the damage will be removed when exposed to the solvent to create the non-planar region.
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