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15 条记录 (耗时 0.018 秒)

    Low-power voltage comparator based on quantum tunneling coupled transistors
    2.
    发明授权
    Low-power voltage comparator based on quantum tunneling coupled transistors 有权
    基于量子隧道耦合晶体管的低功率电压比较器

    公开(公告)号：US07495592B1

    公开(公告)日：2009-02-24

    申请号：US11261746

    申请日：2005-10-27

    申请人： Jeong-Sun Moon ,  Keh-Chung Wang

    发明人： Jeong-Sun Moon ,  Keh-Chung Wang

    IPC分类号： H03M1/00

    CPC分类号： H03M1/368

    摘要： A voltage comparator including a quantum tunneling coupled transistor and a method for tuning the voltage comparator. The comparator includes a quantum tunneling coupled transistor coupled to a resistor and is capable of operating above 10 Giga-samples-per-second or a clock rate of 10 GHz. The comparator has a low power consumption of about 1 mW excluding the power required for clock generation and independent from the sampling rate. The threshold or reference voltage of the comparator is controllable by adjusting the pulse height of the clock signal. The comparator has relatively low hysteresis estimated at about 1 mV.

    摘要翻译： 一种包括量子隧道耦合晶体管的电压比较器和用于调谐电压比较器的方法。 比较器包括耦合到电阻器的量子隧道耦合晶体管，并且能够以超过10千兆采样/秒或10GHz的时钟速率工作。 比较器具有约1mW的低功耗，不包括时钟产生所需的功率，并且独立于采样率。 通过调整时钟信号的脉冲高度可以控制比较器的阈值或参考电压。 比较器估计的滞后相对较低，约为1 mV。

    Non-planar nitride-based heterostructure field effect transistor
    3.
    发明授权
    Non-planar nitride-based heterostructure field effect transistor 有权
    非平面氮化物基异质结场效应晶体管

    公开(公告)号：US07247893B2

    公开(公告)日：2007-07-24

    申请号：US10932811

    申请日：2004-09-01

    申请人： Jeong Sun Moon ,  Paul Hashimoto ,  Wah S. Wong ,  David E. Grider

    发明人： Jeong Sun Moon ,  Paul Hashimoto ,  Wah S. Wong ,  David E. Grider

    IPC分类号： H01L29/20

    CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L21/30612 ,  H01L29/2003 ,  H01L29/7787

    摘要： A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An AlN layer is deposited on the at least one layer of semiconductor material. A portion of the AlN layer is removed using a solvent to create a non-planar region with consistent and repeatable results. The at least one layer beneath the AlN layer is insoluble in the solvent and therefore acts as an etch stop, preventing any damage to the at least one layer beneath the AlN layer. Furthermore, should the AlN layer incur any surface damage as a result of the reactive ion etching, the damage will be removed when exposed to the solvent to create the non-planar region.

    摘要翻译： 公开了使用具有一致的可重复结果的III族氮化物材料制造非平面异质结构场效应晶体管的方法。 该方法提供其上沉积至少一层半导体材料的衬底。 AlN层沉积在至少一层半导体材料上。 使用溶剂去除一部分AlN层以产生具有一致和可重复结果的非平面区域。 AlN层下面的至少一层不溶于溶剂，因此用作蚀刻停止层，防止对AlN层下面的至少一层的任何损坏。 此外，如果AlN层由于反应离子蚀刻而导致任何表面损伤，则当暴露于溶剂以形成非平面区域时，损伤将被去除。

    1-Of-N A/D converter
    4.
    发明授权
    1-Of-N A/D converter 失效
    1-N A / D转换器

    公开(公告)号：US06972702B1

    公开(公告)日：2005-12-06

    申请号：US10869014

    申请日：2004-06-15

    申请人： Jeong-Sun Moon

    发明人： Jeong-Sun Moon

    IPC分类号： H03M1/00 ,  H03M1/36

    CPC分类号： H03M1/002 ,  H03M1/365

    摘要： A flash analog-to-digital converter (ADC). Each comparator of the flash ADC has an OFF-ON-OFF transfer function. For each analog value to be converted, only one comparator is in the ON condition, and the other comparators are in the OFF condition. In this way, the average power consumption of the flash ADC is much less than the average power consumption of prior similar devices.

    摘要翻译： 闪存模数转换器（ADC）。 闪存ADC的每个比较器都具有OFF-ON-OFF传输功能。 对于要转换的每个模拟值，只有一个比较器处于ON状态，其他比较器处于OFF状态。 以这种方式，闪存ADC的平均功耗远远低于以前类似设备的平均功耗。

    GaN-based sensor nodes for in situ detection of gases
    5.
    发明申请
    GaN-based sensor nodes for in situ detection of gases 有权
    用于原位检测气体的GaN基传感器节点

    公开(公告)号：US20050263790A1

    公开(公告)日：2005-12-01

    申请号：US11128110

    申请日：2005-05-11

    申请人： Jeong-Sun Moon ,  Nicholas Prokopuk ,  Kyung-Ah Son

    发明人： Jeong-Sun Moon ,  Nicholas Prokopuk ,  Kyung-Ah Son

    IPC分类号： G01N27/414 ,  G01N33/00 ,  H01L31/0336

    CPC分类号： G01N33/0075 ,  G01N27/414

    摘要： A system for detecting chemical/biological substances and a detection method. The system comprises a plurality of sensing units or nodes and a radiofrequency link. Each unit has several sensors with different sensing curves. Each sensor is able to transmit information related to the sensed substance on a specific frequency. The sensors preferably comprise AlGaN/GaN high electron mobility transistors.

    摘要翻译： 一种检测化学/生物物质的系统及检测方法。 该系统包括多个感测单元或节点和射频链路。 每个单元有几个具有不同传感曲线的传感器。 每个传感器能够在特定频率上传输与感测物质相关的信息。 传感器优选地包括AlGaN / GaN高电子迁移率晶体管。

    Microelectronic device fabrication method
    6.
    发明授权
    Microelectronic device fabrication method 失效
    微电子器件制造方法

    公开(公告)号：US06929987B2

    公开(公告)日：2005-08-16

    申请号：US10746620

    申请日：2003-12-23

    申请人： Jeong-Sun Moon

    发明人： Jeong-Sun Moon

    IPC分类号： H01L21/335 ,  H01L21/338 ,  H01L29/737

    CPC分类号： H01L29/66863 ,  H01L29/66462 ,  H01L29/7376

    摘要： In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so as to form an overhanging ledge in the first channel, and then a metallic contact disposed on top of the ledge portion is diffused into the first channel by ohmic alloying to form an electrode in the first channel.

    摘要翻译： 在形成具有形成在第二沟道层的一部分上的第一沟道层的半导体器件的方法中，蚀刻第一沟道下面的第二沟道的一部分，以在第一沟道中形成悬垂凸缘，然后是 布置在凸缘部分顶部的金属触头通过欧姆合金化扩散到第一通道中，以在第一通道中形成电极。

    MICROELECTRONIC DEVICE FABRICATION METHOD
    7.
    发明申请
    MICROELECTRONIC DEVICE FABRICATION METHOD 失效
    微电子器件制造方法

    公开(公告)号：US20050136577A1

    公开(公告)日：2005-06-23

    申请号：US10746620

    申请日：2003-12-23

    申请人： Jeong-Sun Moon

    发明人： Jeong-Sun Moon

    IPC分类号： H01L21/335 ,  H01L21/338 ,  H01L29/737 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L29/66863 ,  H01L29/66462 ,  H01L29/7376

    摘要： In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so as to form an overhanging ledge in the first channel, and then a metallic contact disposed on top of the ledge portion is diffused into the first channel by ohmic alloying to form an electrode in the first channel.

    摘要翻译： 在形成具有形成在第二沟道层的一部分上的第一沟道层的半导体器件的方法中，蚀刻第一沟道下面的第二沟道的一部分，以在第一沟道中形成悬垂凸缘，然后是 布置在凸缘部分顶部的金属触头通过欧姆合金化扩散到第一通道中，以在第一通道中形成电极。

    Capacitive arrangement for qubit operations
    9.
    发明授权
    Capacitive arrangement for qubit operations 有权
    量子位操作的容性安排

    公开(公告)号：US07830695B1

    公开(公告)日：2010-11-09

    申请号：US11927402

    申请日：2007-10-29

    申请人： Jeong-Sun Moon

    发明人： Jeong-Sun Moon

    IPC分类号： G11C13/00 ,  G11C11/34 ,  G11C11/44 ,  H01L31/00

    CPC分类号： G11C11/44 ,  G01R33/1284 ,  G11C11/5671 ,  G11C19/00

    摘要： A capacitive operation method for quantum computing is disclosed where providing a sequence of write pulses above a threshold voltage induces a single charge population, forming a quantum dot (Q-dot). Determining if the single charge population was induced in the Q-dot occurs by monitoring capacitance changes while the writing is performed. Q-bits (Q-dot pairs) are formed without requiring a separate transistor for each Q-dot by multiplexing the calibration. A device which is able to perform the above method is also disclosed. The device utilizes the ability of cryogenic capacitance bridge circuits to measure the capacitance change caused by the introduction of a single charge population to a Q-dot. The device also permits swapping of Q-dot and Q-bit pairs utilizing a signal multiplexed with the voltage pulses that write (e.g. change the charge population) to the Q-dots.

    摘要翻译： 公开了一种用于量子计算的电容性操作方法，其中提供高于阈值电压的写入脉冲序列引起单个电荷群体，形成量子点（Q点）。 通过在执行写入时监测电容变化来确定单个电荷群体是否在Q点中感应。 通过多路复用校准，形成Q位（Q点对），而不需要为每个Q点分离晶体管。 还公开了能够执行上述方法的装置。 该器件利用低电容电桥电路测量由单个电荷群导入Q点导致的电容变化的能力。 该装置还允许利用与将（例如改变电荷群）改变为Q点的电压脉冲多路复用的信号来交换Q点和Q位对。