Invention Grant
- Patent Title: Layer-forming method using plasma state reactive gas
- Patent Title (中): 使用等离子体状态反应气体的层形成方法
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Application No.: US10181827Application Date: 2002-07-22
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Publication No.: US06835425B2Publication Date: 2004-12-28
- Inventor: Kazuhiro Fukuda , Yoshikazu Kondo , Takashi Murakami , Shunichi Iwamaru , Yumi Muramatsu , Toshio Tsuji
- Applicant: Kazuhiro Fukuda , Yoshikazu Kondo , Takashi Murakami , Shunichi Iwamaru , Yumi Muramatsu , Toshio Tsuji
- Priority: JP2000-377044 20001212; JP2001-175475 20010611
- Main IPC: H05H124
- IPC: H05H124

Abstract:
A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cm2 at a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate.
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