Invention Grant
US06835425B2 Layer-forming method using plasma state reactive gas 有权
使用等离子体状态反应气体的层形成方法

Layer-forming method using plasma state reactive gas
Abstract:
A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cm2 at a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate.
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