发明授权
- 专利标题: Semiconductor module
- 专利标题(中): 半导体模块
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申请号: US09447945申请日: 1999-11-29
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公开(公告)号: US06836006B2公开(公告)日: 2004-12-28
- 发明人: Hirotaka Muto , Takeshi Ohi , Takumi Kikuchi , Toshiyuki Kikunaga
- 申请人: Hirotaka Muto , Takeshi Ohi , Takumi Kikuchi , Toshiyuki Kikunaga
- 优先权: JPP10-339543 19981130
- 主分类号: H01L2302
- IPC分类号: H01L2302
摘要:
In an IGBT module which contains an IGBT device and a diode device connected to each other and accommodated in a case and which radiates heat generated in operation through a radiation board, an object is to reduce the area of the module in the lateral direction to achieve size reduction. The collector electrode surface of an IGBT device is provided on a radiation board, and an element connecting conductor is bonded with conductive resin on the emitter electrode surface. The anode electrode surface of a diode device is bonded on it with the conductive resin. The IGBT device and the diode device are thus stacked and connected in the vertical direction.
公开/授权文献
- US20020043708A1 SEMICONDUCTOR MODULE 公开/授权日:2002-04-18
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