发明授权
US06838297B2 Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same
失效
纳米结构，电子发射器件，碳纳米管器件及其制造方法
- 专利标题： Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same
- 专利标题（中）： 纳米结构，电子发射器件，碳纳米管器件及其制造方法
-
申请号： US09867611申请日： 2001-05-31
-
公开(公告)号： US06838297B2公开(公告)日： 2005-01-04
- 发明人: Tatsuya Iwasaki , Tohru Den
- 申请人： Tatsuya Iwasaki , Tohru Den
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP10-098114 19980327; JP09-047540 19990225
- 主分类号： H01J1/304
- IPC分类号： H01J1/304 ; B81C1/00 ; B82B3/00 ; G01N27/403 ; G01N27/414 ; G11B5/73 ; G11B5/855 ; H01F1/00 ; H01J9/02 ; H01L21/3063 ; H01L21/00 ; H01J9/04 ; H01J9/12 ; H01J9/14
摘要：
The invention provides a nanostructure including an anodized film including nanoholes. The anodized film is formed on a substrate having a surface including at least one material selected from the group consisting of semiconductors, noble metals, Mn, Fe, Co, Ni, Cu and carbon. The nanoholes are cut completely through the anodized film from the surface of the anodized film to the surface of the substrate. The nanoholes have a first diameter at the surface of the anodized film and a second diameter at the surface of the substrate. The nanoholes are characterized in that either a constriction exists at a location between the surface of the anodized film and the surface of the substrate, or the second diameter is greater than the first diameter.
公开/授权文献
信息查询
