发明授权
- 专利标题： Method of forming semiconductor wiring structures
- 专利标题（中）： 形成半导体布线结构的方法
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申请号： US09530588申请日： 1998-11-05
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公开(公告)号： US06838376B2公开(公告)日： 2005-01-04
- 发明人: Kimihiro Matsuse , Hayashi Otsuki
- 申请人： Kimihiro Matsuse , Hayashi Otsuki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP9-319059 19971105; JP10-207198 19980707
- 国际申请： PCTJP98/04983 WO 19981105
- 国际公布： WO9923694 WO 19990514
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/3205 ; H01L21/768 ; H01L23/52 ; H01L23/532 ; H01L29/49 ; H01L29/78 ; H01L21/44
摘要：
A method of forming a barrier metal film formed of a nitride film including tungsten by thermal CVD. The method includes positioning a substrate in a processing vessel and forming a WSi film on one side of the substrate by supplying a process gas including WF6 gas and at least one of SiR4 gas, SiH2Cl2 gas and Si2H6 gas into the processing vessel while a processing pressure in the processing vessel is maintained. The method also includes shutting off the supplying of the process gas into the processing vessel and completely removing the process gas from the processing vessel by supplying a purging gas into the processing vessel after the shutting off the supplying. The WSi film is nitrided by supplying NH3 gas or MMH gas into the processing vessel from which the process gas has been removed, to form a WSixNy film.