发明授权
US06841407B2 Method for aperturing vertical-cavity surface-emitting lasers (VCSELs)
失效
用于开孔垂直腔表面发射激光器（VCSEL）的方法
- 专利标题： Method for aperturing vertical-cavity surface-emitting lasers (VCSELs)
- 专利标题（中）： 用于开孔垂直腔表面发射激光器（VCSEL）的方法
-
申请号： US09935352申请日： 2001-08-21
-
公开(公告)号： US06841407B2公开(公告)日： 2005-01-11
- 发明人: Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa , Guilhem Almuneau
- 申请人： Larry A. Coldren , Eric M. Hall , Shigeru Nakagawa , Guilhem Almuneau
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Greenberg Traurig, LLP
- 代理商 Charles Berman, Esq.
- 主分类号： H01S5/024
- IPC分类号： H01S5/024 ; H01S5/042 ; H01S5/183 ; H01S5/30 ; H01S5/323 ; H01S5/343 ; H01S5/00
摘要：
A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is applied to the active region of the VCSEL. The etching mixture is designed in a manner to selectively etch the active region of the VCSEL at a rate substantially faster than the etch rate of at least one of the multiple DBRS associated with the VCSEL.
公开/授权文献
信息查询
