Invention Grant
- Patent Title: Catalyst-free growth of single-wall carbon nanotubes
- Patent Title (中): 单壁碳纳米管的无催化剂生长
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Application No.: US10226733Application Date: 2002-08-23
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Publication No.: US06843850B2Publication Date: 2005-01-18
- Inventor: Phaedon Avouris , Vincent Derycke , Richard Martel , Marko Radosavljevic
- Applicant: Phaedon Avouris , Vincent Derycke , Richard Martel , Marko Radosavljevic
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: F. Chau & Associates, LLC
- Main IPC: C30B1/02
- IPC: C30B1/02 ; C30B25/02
Abstract:
A method for growing single-walled nanotubes comprises providing a silicon carbide semiconductor wafer comprising a silicon face and a carbon face, and annealing the silicon carbide semiconductor wafer in a vacuum at a temperature of at least about 1300 degrees Celsius, inducing formation of single wall carbon nanotubes on the silicon face.
Public/Granted literature
- US20040035355A1 Catalyst-free growth of single-wall carbon nanotubes Public/Granted day:2004-02-26
Information query
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