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    Carbon nanotube field effect transistor
    1.
    发明授权
    Carbon nanotube field effect transistor 有权
    碳纳米管场效应晶体管

    公开(公告)号：US09502659B2

    公开(公告)日：2016-11-22

    申请号：US11893673

    申请日：2007-08-16

    Applicant: Jean-Philippe Bourgoin ,  Marcelo Goffman ,  Vincent Derycke ,  Nicolas Chimot

    Inventor： Jean-Philippe Bourgoin ,  Marcelo Goffman ,  Vincent Derycke ,  Nicolas Chimot

    IPC: H01L51/00 ,  B82Y10/00 ,  H01L51/05

    CPC classification number: H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0525 ,  H01L51/0545 ,  H01L51/0558

    Abstract: A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.

    Abstract translation: 提供了一种基于纳米管的柔性场效应晶体管及其制造方法。 根据本发明的场效应晶体管包括至少两个接触电极，分别是漏极和源极，连接到接触电极的导电区，所述区包括基本对准的多个单壁碳纳米管，栅电极 用于控制在所述区域中循环的电流和其上沉积有接触和栅电极的柔性基板。 导电区中的纳米管密度严格大于每微米10纳米管。

    DEVICE FOR CHARACTERISING ELECTRIC OR ELECTRONIC COMPONENTS
    2.
    发明申请
    DEVICE FOR CHARACTERISING ELECTRIC OR ELECTRONIC COMPONENTS 审中-公开
    用于表征电子或电子元件的装置

    公开(公告)号：US20120092032A1

    公开(公告)日：2012-04-19

    申请号：US13142007

    申请日：2009-12-22

    Applicant: Jean-Philippe Bourgoin ,  Vincent Derycke ,  Laurianne Nougaret ,  Gilles Dambrine ,  Henri Happy

    Inventor： Jean-Philippe Bourgoin ,  Vincent Derycke ,  Laurianne Nougaret ,  Gilles Dambrine ,  Henri Happy

    IPC: G01R27/08

    CPC classification number: G01R27/28 ,  G01R35/005

    Abstract: The invention relates to an integrated device (PM) for characterising electric or electronic components (DUT), in particular nanometric ones, comprising a substantially insulating substrate (S) on which are provided four conducting pads (P1, P2, P3, P4), at least three resistive pads (R1, R3, R4) connecting said pads together, and a transmission line (CPW) including a signal conductor (Cc) and at least one ground conductor (CL1, CL2), wherein: said resistive pads are arranged so as to connect a first conducting pad to a second and a fourth conducting pad, and to connect said fourth conducting pad to a third conducting pad; the signal conductor of the transmission line is connected to the first conducting pad; and the ground conductor of the transmission line is connected to the third pad.

    Abstract translation: 本发明涉及一种用于表征电子或电子部件（DUT），特别是纳米电子元件（DUT）的集成器件（PM），其包括基本绝缘的衬底（S），四个导电焊盘（P1，P2，P3，P4） 将所述焊盘连接在一起的至少三个电阻焊盘（R1，R3，R4）和包括信号导体（Cc）和至少一个接地导体（CL1，CL2）的传输线（CPW），其中：所述电阻焊盘被布置 以将第一导电焊盘连接到第二和第四导电焊盘，并将所述第四导电焊盘连接到第三导电焊盘; 传输线的信号导体连接到第一导电焊盘; 并且传输线的接地导体连接到第三焊盘。

    Device for detecting/storing electromagnetic beams, method for making same, and use thereof and imager incorporating same
    5.
    发明授权
    Device for detecting/storing electromagnetic beams, method for making same, and use thereof and imager incorporating same 有权
    用于检测/存储电磁束的装置，其制造方法及其用途以及结合其的成像器

    公开(公告)号：US07982251B2

    公开(公告)日：2011-07-19

    申请号：US12282584

    申请日：2007-03-13

    Applicant: Jean-Philippe Bourgoin ,  Vincent Derycke ,  Julien Borghetti

    Inventor： Jean-Philippe Bourgoin ,  Vincent Derycke ,  Julien Borghetti

    IPC: H01L31/10

    CPC classification number: B82Y10/00 ,  H01L27/305 ,  H01L51/0036 ,  H01L51/0048 ,  H01L51/0545 ,  H01L51/0562 ,  H01L51/428 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/834 ,  Y10S977/938 ,  Y10S977/954

    Abstract: The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ∈, which satisfy ∈r>0.2 nm*1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.

    Abstract translation: 本发明涉及一种用于检测和存储电磁波束的装置，一种包含其的成像器件，一种制造该装置的方法及其用途。 本发明的器件包括场效应晶体管，其包括：两个源极和漏极接触电极，导电单元，其连接到两个接触电极并且涂覆有能够吸收光束的光敏聚合物涂层，以检测产生 响应于由所述单元检测到的负载和存储所述负载的负载，以及能够控制所述单元中的电流以及空间分布所述涂层中的负载并且通过栅极电介质与所述单元分离的栅电极 。 所述器件被配置为使得导电单元包括至少一个能够提供表示已经暴露于光束的光电晶体管的导电性的变化的电信号的半导体纳米管或纳米线，并且栅极电介质具有厚度和介电常数 ∈，其满足∈r> 0.2nm * 1，使得曝光后的电导率可以在减少的时间内电复位，并且器件形成至少一个成像像素。

    Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process
    7.
    发明授权
    Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process 失效
    用于处理半导体材料的表面，特别是使用氢的方法和使用该方法获得的表面的方法

    公开(公告)号：US07008886B2

    公开(公告)日：2006-03-07

    申请号：US10473279

    申请日：2002-04-17

    Applicant: Vincent Derycke ,  Patrick Soukiassan

    Inventor： Vincent Derycke ,  Patrick Soukiassan

    IPC: H01L21/00

    CPC classification number: C30B29/06 ,  C30B33/00 ,  H01L21/0445 ,  H01L21/045 ,  H01L21/048 ,  H01L21/28562 ,  H01L29/1608 ,  Y10S438/931 ,  Y10S438/974

    Abstract: A process treats a surface of a semiconductor material in order to put the surface into a predetermined electrical state. The semiconductor material is preferably monocrystalline. The process includes (a) preparing the surface of the semiconductor material such that the surface has a controlled organization at an atomic scale such that the surface is capable of combining with a chosen material, and (b) combining the surface thus prepared with a material chosen from among hydrogen, molecules containing hydrogen, metals, organic molecules and inorganic molecules, wherein the preparing and the combining the surface with the material cooperate to obtain the predetermined electrical state of the surface.

    Abstract translation: 一种工艺处理半导体材料的表面以使表面进入预定的电气状态。 半导体材料优选为单晶。 该方法包括（a）制备半导体材料的表面，使得表面具有原子尺度的受控组织，使得表面能够与所选择的材料组合，和（b）将由此制备的表面与材料组合 选自氢，分子含氢，金属，有机分子和无机分子，其中制备和组合表面与材料协调以获得表面的预定电状态。

    DEVICE FOR DETECTING/STORING ELECTROMAGNETIC BEAMS, METHOD FOR MAKING SAME, AND USE THEREOF AND IMAGER INCORPORATING SAME
    10.
    发明申请
    DEVICE FOR DETECTING/STORING ELECTROMAGNETIC BEAMS, METHOD FOR MAKING SAME, AND USE THEREOF AND IMAGER INCORPORATING SAME 有权
    用于检测/存储电磁波的装置，制造它们的方法及其使用方法和包含它们的成像器

    公开(公告)号：US20090179240A1

    公开(公告)日：2009-07-16

    申请号：US12282584

    申请日：2007-03-13

    Applicant: Jean-Philippe Bourgoin ,  Vincent Derycke ,  Julien Borghetti

    Inventor： Jean-Philippe Bourgoin ,  Vincent Derycke ,  Julien Borghetti

    IPC: H01L31/112 ,  H01L21/28

    CPC classification number: B82Y10/00 ,  H01L27/305 ,  H01L51/0036 ,  H01L51/0048 ,  H01L51/0545 ,  H01L51/0562 ,  H01L51/428 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/834 ,  Y10S977/938 ,  Y10S977/954

    Abstract: The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ε, which satisfy εr>0.2 nm* 1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.

    Abstract translation: 本发明涉及一种用于检测和存储电磁波束的装置，一种包含其的成像器件，一种制造该装置的方法及其用途。 本发明的器件包括场效应晶体管，其包括：两个源极和漏极接触电极，导电单元，其连接到两个接触电极并且涂覆有能够吸收光束的光敏聚合物涂层，以检测产生 响应于由所述单元检测到的负载和存储所述负载的负载，以及能够控制所述单元中的电流以及空间分布所述涂层中的负载并且通过栅极电介质与所述单元分离的栅电极 。 所述器件被配置为使得导电单元包括至少一个能够提供表示已经暴露于光束的光电晶体管的导电性的变化的电信号的半导体纳米管或纳米线，并且栅极电介质具有厚度和介电常数 ε，其满足epsilon> 0.2nm * 1，使得在曝光后的电导率可以在减少的时间内电复位，并且器件形成至少一个成像像素。

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