发明授权
- 专利标题： Method for fabricating a silicon thin-film
- 专利标题（中）： 硅薄膜的制造方法
-
申请号： US10028712申请日： 2001-12-28
-
公开(公告)号： US06846513B2公开(公告)日： 2005-01-25
- 发明人: Masahiro Furusawa , Satoru Miyashita , Ichio Yudasaka , Tatsuya Shimoda , Yasuaki Yokoyama , Yasuo Matsuki , Yasumasa Takeuchi
- 申请人： Masahiro Furusawa , Satoru Miyashita , Ichio Yudasaka , Tatsuya Shimoda , Yasuaki Yokoyama , Yasuo Matsuki , Yasumasa Takeuchi
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2000-402809 20001228
- 主分类号： C23C16/24
- IPC分类号： C23C16/24 ; B32B9/04 ; C23C16/04 ; C23C16/448 ; H01L21/205
摘要：
Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.
公开/授权文献
- US20030087110A1 Method for fabricating a silicon thin-film 公开/授权日：2003-05-08
信息查询
IPC分类:
