摘要:
Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.
摘要:
A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as by CVD methods.
摘要:
A solar battery is provided having a structure in which at least two semiconductor thin-films are disposed one over the other between a pair of electrodes, each semiconductor thin-film differing from the other in the impurity concentration thereof and/or the type of semiconductor. Formation of at least one of the semiconductor thin-films consists of coating a liquid coating composition containing a silicon compound so as to form a coating film and a step of converting the coating film into a silicon film by heat treatment and/or light treatment.
摘要:
There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film.A conductive film forming composition comprising a complex of an amine compound and aluminum hydride and an organic solvent is applied on a substrate and then subjected to a heat treatment and/or irradiation with light, whereby a conductive film such as an electrode or wiring is produced.
摘要:
It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.
摘要:
A liquid crystal aligning agent composed of a polymer containing a moiety having two aromatic nuclei and an ethylene carbonyl group therebetween. The liquid crystal aligning agent is converted to a liquid crystal alignment film by irradiation a thin film of the agent with a linearly polarized ray.
摘要:
A patterning method comprising the steps of:the first step of disposing at least one silane compound selected from the group consisting of a silicon hydride compound and a silicon halide compound in the space between a substrate and a patterned mold; andthe second step of subjecting the silane compound to at least one treatment selected from a heat treatment and an ultraviolet exposure treatment.A pattern composed of silicon can be formed by carrying out the second step in an inert atmosphere or a reducing atmosphere and a pattern composed of silicon oxide can be formed by carrying out at least part of the second step in an oxygen-containing atmosphere.
摘要:
A polymer production process comprising reacting a compound represented by the following formula (1) in the presence of a binuclear metal complex represented by the following formula (2). R4-nMHn (1) (in the formula (1), R is a monovalent organic group, M is a silicon atom or a germanium atom, and n is 2 or 3.) [CpM(μ-CH2)]2 (2) (in the formula (2), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)
摘要:
A composition for forming a silicon.aluminum film, containing a silicon compound and an aluminum compound. The silicon.aluminum film is obtained by forming a coating film of the above composition and treating it with heat and/or light. The silicon.aluminum film can easily be formed from the above composition by the above method at a low cost without requiring an expensive vacuum apparatus or high-frequency wave generator.
摘要:
A composition for forming an aluminum fine particle dispersed film, which comprises a complex of an amine compound and aluminum hydride and a polymer component having film formability is prepared, and a film formed therefrom is heated or exposed to light to manufacture an aluminum fine particle dispersed film.The above composition can provide an Al fine particle dispersed film which can be used in electronic devices or optical devices, an Al wiring pattern film and an Al mirror film.