Invention Grant
US06846708B2 Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device
有权
具有改进的掺杂分布的半导体器件和改进半导体器件的掺杂分布的方法
- Patent Title: Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device
- Patent Title (中): 具有改进的掺杂分布的半导体器件和改进半导体器件的掺杂分布的方法
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Application No.: US10601717Application Date: 2003-06-23
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Publication No.: US06846708B2Publication Date: 2005-01-25
- Inventor: Thomas Feudel , Manfred Horstmann , Rolf Stephan
- Applicant: Thomas Feudel , Manfred Horstmann , Rolf Stephan
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE10261374 20021230
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/336 ; H01L21/00 ; H01L21/84
Abstract:
An implanting process for amorphizing a crystalline substrate is proposed according to the present invention. In particular, according to the present invention, amorphous regions are formed in a substrate by exposing the substrate to an ion beam which is kept at a tilt angle between 10 and 80 degrees with respect to the surface of the substrate. Accordingly, ion channeling during subsequent implanting processes is prevented not only in the vertical direction but also in the horizontal direction so that doped regions exhibiting optimum doping profile tailoring may be realized.
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